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MagSil Corporation et al v. Seagate Technology et al DC CAFC
- 1:08-cv-00940
- D. Del.
- Judge: Harvey Bartle, III
- Filed: 12/12/2008
- Closed: 02/16/2011
- Latest Docket Entry: 10/17/2013
- PACER
- Docket updated daily
2
Plaintiffs
22
Defendants
1
Accused
Product
2
Patents-in-Suit
797
Days in
Litigation
-
MagSil Corporation et al v. Seagate Technology et al DC CAFC
- 1:08-cv-00940
- D. Del.
- Judge: Harvey Bartle, III
- Filed: 12/12/2008
- Closed: 02/16/2011
- Latest Docket Entry: 10/17/2013
- PACER
- Docket updated daily
Cause of Action
Infringement
Market Sector
Networking
Court
Assigned Judge
Outcome Summary
- Patent Information
-
Validity & Enforceability
| Claim # | Claim Text | Outcome |
|---|---|---|
| 1 |
A device forming a junction having a resistance comprising: a first electrode having a first magnetization direction, a second electrode having a second magnetization direction, and an electrical insulator between the first and the second
view more
|
Invalid
Entry 629 Entry 628 |
| 2 |
The device of claim 1, wherein the first and the second electrodes are ferromagnetic, and the first electrode has a coercive magnetic field of different magnitude than that of the second electrode.
|
Invalid
Entry 629 Entry 628 |
| 3 |
The device of claim 1, wherein the first and the second electrodes have melting points greater than 1000 degrees Celsius and conduction electron spin polarization values greater than 0.3.
|
Invalid
Entry 629 Entry 628 |
| 4 |
The device of claim 1, wherein the insulator forms a tunnel barrier layer between the first and the second electrodes.
|
Invalid
Entry 629 Entry 628 |
| 5 |
The device of claim 1, wherein the junction forms a tunnel junction.
|
Invalid
Entry 629 Entry 628 |
| 23 |
A memory device for storing binary data comprising: a movable read-write sensor head comprising two trilayer devices, each having a junction with a resistance, separated by a gap, wherein each device comprises: a first film layer having a first
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|
Invalid
Entry 629 Entry 628 |
| 24 |
The memory device of claim 23, wherein the first and the second film layers are ferromagnetic, and the first film layer has a coercive magnetic field of different magnitude than that of the second film layer.
|
Invalid
Entry 629 Entry 628 |
| 25 |
The memory device of claim 23, wherein the first and the second film layers have melting points greater than 1000 degrees Celsius and conduction electron spin polarization values greater than 0.3.
|
Invalid
Entry 629 Entry 628 |
| 26 |
The memory device of claim 23, wherein the insulator layer forms a tunnel barrier layer between the first and the second film layers.
|
Invalid
Entry 629 Entry 628 |
| 28 |
The memory device of claim 23, wherein each trilayer junction forms a tunnel junction.
|
Invalid
Entry 629 Entry 628 |
-
Infringement
Hitachi America Limited
- 1 Detail
| Accused Product | Patent # | Claim # | Outcome |
|---|---|---|---|
| Tunneling Magnetoresistive (TMR) technology | US 5,629,922 A |
1, 2, 3, 4, 5, 23, 24, 25, 26, 28
|
No infringement
Entry 629
|
Hitachi Data Systems Corporation
- 1 Detail
| Accused Product | Patent # | Claim # | Outcome |
|---|---|---|---|
| Tunneling Magnetoresistive (TMR) technology | US 5,629,922 A |
1, 2, 3, 4, 5, 23, 24, 25, 26, 28
|
No infringement
Entry 629
|
| Accused Product | Patent # | Claim # | Outcome |
|---|---|---|---|
| Tunneling Magnetoresistive (TMR) technology | US 5,629,922 A |
1, 2, 3, 4, 5, 23, 24, 25, 26, 28
|
No infringement
Entry 629
|
| Accused Product | Patent # | Claim # | Outcome |
|---|---|---|---|
| Tunneling Magnetoresistive (TMR) technology | US 5,629,922 A |
1, 2, 3, 4, 5, 23, 24, 25, 26, 28
|
No infringement
Entry 629
|
