-
Semiconductor Energy Laboratory Company Ltd v. Toppoly Optoelectronics Corp et al NPE DC
- 2:04-cv-04783
- C.D. Cal.
- Judge: Terry J. Hatter, Jr
+1
- Filed: 06/30/2004
- Closed: 03/23/2007
- Latest Docket Entry: 08/16/2007
- PACER
1
Plaintiff
5
Defendants
0
Accused
Products
5
Patents-in-Suit
997
Days in
Litigation
-
Semiconductor Energy Laboratory Company Ltd v. Toppoly Optoelectronics Corp et al NPE DC
- 2:04-cv-04783
- C.D. Cal.
- Judge: Terry J. Hatter, Jr
+1
- Filed: 06/30/2004
- Closed: 03/23/2007
- Latest Docket Entry: 08/16/2007
- PACER
Complaint Unavailable
Cause of Action
Unknown
Assigned Judge
Outcome Summary
Patent Information
-
Infringement
Matsunichi Hi-Tech Ltd
- 2 Details
| Accused Product | Patent # | Claim # | Outcome |
|---|---|---|---|
| Method of manufacturing a thin film transistor using multiple sputtering chambers | US 6,177,302 B1 | All Asserted Claims |
No infringement
Entry 184
|
| Method of manufacturing gate insulated field effect transistors | US 6,566,175 B2 | All Asserted Claims |
No infringement
Entry 184
|
Matsunichi Hi-Tech (USA) Inc.
- 2 Details
| Accused Product | Patent # | Claim # | Outcome |
|---|---|---|---|
| Method of manufacturing a thin film transistor using multiple sputtering chambers | US 6,177,302 B1 | All Asserted Claims |
No infringement
Entry 184
|
| Method of manufacturing gate insulated field effect transistors | US 6,566,175 B2 | All Asserted Claims |
No infringement
Entry 184
|
Samsung Techwin Corporation
- 2 Details
| Accused Product | Patent # | Claim # | Outcome |
|---|---|---|---|
| Method of manufacturing a thin film transistor using multiple sputtering chambers | US 6,177,302 B1 | All Asserted Claims |
No infringement
Entry 184
|
| Method of manufacturing gate insulated field effect transistors | US 6,566,175 B2 | All Asserted Claims |
No infringement
Entry 184
|
Toppoly Optoelectronics Corporation
- 2 Details
| Accused Product | Patent # | Claim # | Outcome |
|---|---|---|---|
| Method of manufacturing a thin film transistor using multiple sputtering chambers | US 6,177,302 B1 | All Asserted Claims |
No infringement
Entry 184
|
| Method of manufacturing gate insulated field effect transistors | US 6,566,175 B2 | All Asserted Claims |
No infringement
Entry 184
|