A light-emitting diode array comprising: a substrate; an adhesive layer formed on the substrate; and a plurality of electrically connected epitaxial light-emitting stack layers disposed on the adhesive layer, each of the epitaxial light-emitting stack layers comprising a P-contact and an N-contact, wherein the P-contact and the N-contact are disposed on the same side of the epitaxial light-emitting stack layer. view more

The light-emitting diode array of claim 1, wherein each of the epitaxial light-emitting stack layers further comprises: a first conductive semiconductor stack layer; a light-emitting layer formed on the first conductive semiconductor stack layer; and a second conductive semiconductor stack layer formed on the light-emitting layer. view more

The light-emitting diode array of claim 1 further comprising a plurality of insulating regions formed between any two adjacent epitaxial light-emitting stack layers for electrically isolating one of these two adjacent epitaxial light-emitting stack layers from the other. view more

The light-emitting diode array of claim 1, wherein the substrate comprises at least one material selected from a material group consisting of GaP, GaAs, Si, SiC, AI.sub.2O.sub.3, glass, quartz, GaAsP, AIN, metal, and AlGaAs.

A light-emitting diode array comprising: a substrate; an adhesive layer formed on the substrate, the adhesive layer comprising a top surface and a plurality of adhesive regions disposed on the top surface; a first light-emitting stack layer formed on a first adhesive region of the plurality of adhesive regions, the first light-emitting stack layer comprising a top surface, a first first-conductivity contact region formed on the top surface, and a first second-conductivity contact region formed on the top surface; a first first-conductivity conductive contact formed on the ffirst first-conductivity contact region; a first second-conductivity conductive contact formed on the first second-conductivity contact region; a second light-emitting stack layer formed on a second adhesive region of the plurality of adhesive regions, the second light-emitting stack layer comprising a top surface, a second first conductive contact region formed on the top surface, and a second second-conductivity contact region formed on the top surface; a second first-conductivity conductive contact formed on the second first-conductivity contact region; a second second-conductivity conductive contact formed on the second second-conductivity contact region; and a first conductive line for electrically connecting either of the conductive contacts of the first light-emitting stack layer to either of the conductive contacts of the second light-emitting stack layer. view more

The light-emitting diode array of claim 13, wherein the first-conductivity contact region is n-type, and the second-conductivity contact region is p-type.

The light-emitting diode array of claim 13, wherein the first light-emitting stack layer further comprises: a first first-conductivity semiconductor stack layer; a first light-emitting layer formed on the first first-conductivity semiconductor stack layer; and a first second-conductivity semiconductor stack layer formed on the first light-emitting layer. view more

The light-emitting diode array of claim 13, wherein the second light-emitting stack layer further comprises: a second first-conductivity semiconductor stack layer; a second light-emitting layer formed on the second first-conductivity semiconductor stack layer; and a second second-conductivity semiconductor stack layer formed on the second light-emitting layer. view more

The light-emitting diode array of claim 13 further comprising a insulating region formed between the first light-emitting stack layer and the second light-emitting stack layer for electrically isolating one of these two light-emitting stack layer from the other. view more

The light-emitting diode array of claim 13, wherein the substrate comprises at least one material selected from a material group consisting of GaP, GaAs, Si, SiC, AI.sub.2O.sub.3, glass, quartz, GaAsP, AIN, metal, and AlGaAs.

An LED lamp according to clam <HIL><BOLD>32</BOLD></HIL>, wherein said cavities cut into said lower semiconductor layer.

An LED lamp for generating incoherent visible light, comprising:</claim-text> a non-semiconductor member having a top face; a semiconductor structure formed over said top face, said semiconductor structure comprising lower and upper inorganic onductor layers of opposite conductivities and an active region generating LED light; at least one metal conductor over and in electrical contact with part of said lower semiconductor layer; a top conductor layer formed on and electrically connected to said upper semiconductor layer; and wherein said semiconductor structure has outer side faces and has several light-extraction surfaces arranged for harvesting light from the semiconductor structure, said light-extraction surfaces being distant from said outer side faces and inclined to said semiconductor layers, LED light propagating in the semiconductor structure being diverted at said light-extraction faces. view more

A light emitting device comprising: a substrate, wherein the substrate comprises a first major surface, a second major surface, and a sidewall; and a light emitting stack layer formed on the first major surface of the substrate, comprising a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer; wherein the sidewall of the substrate comprises a first area and a second area; wherein the morphology of the first area is substantially flat and the morphology of the second area is substantially textured. view more

The light emitting device of claim 2, wherein an extension direction of the convex-concave structure is longitudinal.

The light emitting device of claim 1, wherein the second area is formed on the sidewall of the substrate; wherein the second area is sandwiched by two of the first areas.

A light-emitting structure, comprising: a layer structure, having a first edge, for emitting light; and a carrier substrate, having a second edge, bonded to the layer structure and not being a single crystal wafer; wherein the light-emitting structure has a light output power of more than 4 mW at 20 mA current. view more

The light-emitting structure of claim 1, further comprising a dielectric adhesive layer between the layer structure and the carrier substrate.

The light-emitting structure of claim 1, wherein the carrier substrate comprises a polycrystal or an amorphous crystal.