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MATSUSHITA ELECTRIC v. SAMSUNG ELECTRONICS, et al DC
- 3:02-cv-00336
- D.N.J.
- Judge: Garrett E. Brown, Jr +1
- Filed: 01/25/2002
- Closed: 12/20/2006
- Latest Docket Entry: 03/24/2008
- PACER
- Docket updated daily
1
Plaintiff
4
Defendants
1
Accused
Product
3
Patents-in-Suit
1,791
Days in
Litigation
-
MATSUSHITA ELECTRIC v. SAMSUNG ELECTRONICS, et al DC
- 3:02-cv-00336
- D.N.J.
- Judge: Garrett E. Brown, Jr +1
- Filed: 01/25/2002
- Closed: 12/20/2006
- Latest Docket Entry: 03/24/2008
- PACER
- Docket updated daily
Cause of Action
Willful Patent Infringement
Assigned Judge
Outcome Summary
- Patent Information
-
Validity & Enforceability
Claim # | Claim Text | Outcome |
---|---|---|
1 |
A semiconductor memory apparatus including a memory array region having formed therein: a plurality of unit memory cell blocks distributed through said memory array region at regular spacings, each formed of an array of memory cells; a plurality
view more
|
Invalid (102 and 103)
Entry 369 Entry 339 |
2 |
A semiconductor memory apparatus according to claim 1, in which each of said said first and second voltage supply meshes is formed of a plurality of first supply lines extending in a first direction and formed in an upper layer of a substrate of
view more
|
Invalid (102 and 103)
Entry 369 Entry 339 |
3 |
A semiconductor memory apparatus according to claim 2, in which each of said first and second supply lines of said first voltage supply mesh is connected to said first supply voltage by at least one end thereof, and in which each of said first and
view more
|
Invalid (102 and 103)
Entry 369 Entry 339 |
4 |
A semiconductor memory apparatus according to claim 1, in which each of said sense amplifier drive circuits is formed within a portion of said memory array region in which is formed one of said sense amplifier circuits.
|
Invalid (102 and 103)
Entry 369 Entry 339 |
6 |
A semiconductor memory apparatus according to claim 1, in which said plurality of unit memory cell blocks are configured as a plurality of columns of unit memory cell blocks each extending in a first direction, each column consisting of a
view more
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Invalid (102 and 103)
Entry 369 Entry 339 |
7 |
A semiconductor memory apparatus according to claim 6, in which each of said sense amplifier drive circuits is disposed in a region between two adjacent ones of said connection regions of two adjacent ones of said columns.
|
Invalid (102 and 103)
Entry 369 Entry 339 |
Claim # | Claim Text | Outcome |
---|---|---|
1 |
A semiconductor memory device comprising: a memory cell array having a plurality of memory cells arranged in the form of a matrix; a means for reading into a plurality of data lines data from a plurality of memory cells connected to a specific
view more
|
Invalid (102 and 103)
Entry 369 Entry 339 |
4 |
A semiconductor memory device comprising: a memory cell array having a plurality of memory cells arranged in the form of a matrix; a means for reading into a plurality of data lines data from a plurality of memory cells connected to a specific
view more
|
Invalid (102 and 103)
Entry 369 Entry 339 |
7 |
A semiconductor memory device comprising: a memory cell array having a plurality of memory cells arranged in the form of a matrix; a means for reading into a plurality of data lines data from said plurality of memory cells in said memory cell
view more
|
Invalid (102 and 103)
Entry 369 Entry 339 |
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Infringement
Samsung Austin Semiconductor LLC
- 3 Details
Accused Product | Patent # | Claim # | Outcome |
---|---|---|---|
Synchronous dynamic random access memorySynchronous dynamic random access memory devicesType 1 DRAMType 2 DRAMType 3 DRAMType 5 DRAMType 6 DRAMType A DRAMType B DRAM | US 5,053,998 A |
1, 2, 4, 5, 7, 8
|
Infringement
Entry 369Entry 339 Entry 203 |
Synchronous dynamic random access memorySynchronous dynamic random access memory devicesType 1 DRAMType 2 DRAMType 3 DRAMType 5 DRAMType 6 DRAMType A DRAMType B DRAM | US 5,375,095 A |
1, 2, 3, 4, 6, 7
|
Infringement
Entry 369Entry 339 Entry 203 |
Rambus DRAM deviceSDRAM deviceSDRAM DevicesSynchronous dynamic random access memorySynchronous dynamic random access memory devices | US 5,475,648 A |
1, 4
|
No infringement
Entry 369Entry 339 Entry 203 |
Samsung Electronics America, Inc.
- 3 Details
Accused Product | Patent # | Claim # | Outcome |
---|---|---|---|
Synchronous dynamic random access memorySynchronous dynamic random access memory devicesType 1 DRAMType 2 DRAMType 3 DRAMType 5 DRAMType 6 DRAMType A DRAMType B DRAM | US 5,053,998 A |
1, 2, 4, 5, 7, 8
|
Infringement
Entry 369Entry 339 Entry 203 |
Synchronous dynamic random access memorySynchronous dynamic random access memory devicesType 1 DRAMType 2 DRAMType 3 DRAMType 5 DRAMType 6 DRAMType A DRAMType B DRAM | US 5,375,095 A |
1, 2, 3, 4, 6, 7
|
Infringement
Entry 369Entry 339 Entry 203 |
Rambus DRAM deviceSDRAM deviceSDRAM DevicesSynchronous dynamic random access memorySynchronous dynamic random access memory devices | US 5,475,648 A |
1, 4
|
No infringement
Entry 369Entry 339 Entry 203 |
Samsung Electronics Co. Ltd.
- 3 Details
Accused Product | Patent # | Claim # | Outcome |
---|---|---|---|
Synchronous dynamic random access memorySynchronous dynamic random access memory devicesType 1 DRAMType 2 DRAMType 3 DRAMType 5 DRAMType 6 DRAMType A DRAMType B DRAM | US 5,053,998 A |
1, 2, 4, 5, 7, 8
|
Infringement
Entry 369Entry 339 Entry 203 |
Synchronous dynamic random access memorySynchronous dynamic random access memory devicesType 1 DRAMType 2 DRAMType 3 DRAMType 5 DRAMType 6 DRAMType A DRAMType B DRAM | US 5,375,095 A |
1, 2, 3, 4, 6, 7
|
Infringement
Entry 369Entry 339 Entry 203 |
Rambus DRAM deviceSDRAM deviceSDRAM DevicesSynchronous dynamic random access memorySynchronous dynamic random access memory devices | US 5,475,648 A |
1, 4
|
No infringement
Entry 369Entry 339 Entry 203 |
Samsung Semiconductor Incorporated
- 3 Details
Accused Product | Patent # | Claim # | Outcome |
---|---|---|---|
Synchronous dynamic random access memorySynchronous dynamic random access memory devicesType 1 DRAMType 2 DRAMType 3 DRAMType 5 DRAMType 6 DRAMType A DRAMType B DRAM | US 5,053,998 A |
1, 2, 4, 5, 7, 8
|
Infringement
Entry 369Entry 339 Entry 203 |
Synchronous dynamic random access memorySynchronous dynamic random access memory devicesType 1 DRAMType 2 DRAMType 3 DRAMType 5 DRAMType 6 DRAMType A DRAMType B DRAM | US 5,375,095 A |
1, 2, 3, 4, 6, 7
|
Infringement
Entry 369Entry 339 Entry 203 |
Rambus DRAM deviceSDRAM deviceSDRAM DevicesSynchronous dynamic random access memorySynchronous dynamic random access memory devices | US 5,475,648 A |
1, 4
|
No infringement
Entry 369Entry 339 Entry 203 |