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KAIST IP US LLC v. Samsung Electronics Co., LTD., et al NPE DC CAFC
- 2:16-cv-01314
- E.D. Tex.
- Judge: Rodney Gilstrap
- Filed: 11/29/2016
- Closed: 02/21/2020
- Latest Docket Entry: 09/10/2020
- PACER
1
Plaintiff
7
Defendants
17
Accused
Products
1
Patent-in-Suit
1,180
Days in
Litigation
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KAIST IP US LLC v. Samsung Electronics Co., LTD., et al NPE DC CAFC
- 2:16-cv-01314
- E.D. Tex.
- Judge: Rodney Gilstrap
- Filed: 11/29/2016
- Closed: 02/21/2020
- Latest Docket Entry: 09/10/2020
- PACER
Market Sector
Semiconductors
Assigned Judge
Outcome Summary
Patent Information
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Validity & Enforceability
Claim # | Claim Text | Outcome |
---|---|---|
1 |
A double-gate FinFET device, comprising: a bulk silicon substrate; a Fin active region which is a wall-shape single crystalline silicon on a surface of the bulk silicon substrate and connected to said bulk silicon substrate; a second oxide layer
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|
Valid
Entry 678 Entry 481 Entry 676 Entry 499 |
2 |
The device as claimed in claim 1, wherein the width of said Fin active region lies in a range between 4 nm and 100 nm.
|
Valid
Entry 678 Entry 481 Entry 676 Entry 499 |
3 |
The device as claimed in claim 1, wherein the height of said Fin active region from the surface of said bulk silicon substrate lies in a range between 10 nm and 1000 nm.
|
Valid
Entry 678 Entry 481 Entry 676 Entry 499 |
4 |
The device as claimed in claim 3, wherein the height of said Fin active region from the surface of said second oxide layer is between 5 nm and 300 nm.
|
Valid
Entry 678 Entry 481 Entry 676 Entry 499 |
5 |
The device as claimed in claim 1, wherein the parasitic capacitance between said gate and bulk silicon substrate is reduced by selecting the thickness of said second oxidation layer to be between 20 nm and 800 nm.
|
Valid
Entry 678 Entry 481 Entry 676 Entry 499 |
6 |
The device as claimed in claim 1, wherein the contact resistance is reduced by selecting the size of a contact region which is in contact with said metal layer to be greater than the width of said Fin active region and/or the length of said gate.
|
Valid
Entry 678 Entry 481 Entry 676 Entry 499 |
11 |
The device as claimed in claim 1, wherein said doping junction depth for the source/drain formed in said Fin active region, when the upper surface of said second oxide layer is taken as a reference level (0 nm), is around 0 nm to 50 nm above the
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|
Valid
Entry 678 Entry 481 Entry 676 Entry 499 |
12 |
The device as claimed in claim 1, wherein said doping junction depth for the source/drain formed in said Fin active region, when the upper surface of said second oxide layer is taken as a reference level (0 nm), is around 0 nm to −50 nm below the
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|
Valid
Entry 481 Entry 676 Entry 499 |
13 |
A double-gate FinFET device, comprising: a bulk silicon substrate; a Fin active region which is a all-shape single crystalline sililcon on a surface of the bulk silicon substrate and connected to said bulk silicon substrate; a second oxide layer
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|
Valid
Entry 678 Entry 481 Entry 676 Entry 499 |
15 |
The device as claimed in claim 1, wherein the two top corners of said Fin active region are chamfered through an oxidation and etching, or (and) annealing process in a hydrogen atmosphere.
|
Valid
Entry 678 Entry 481 Entry 676 Entry 499 |
16 |
The device as claimed in claim 2, wherein the height of said Fin active region from the surface of said bulk silicon substrate lies in a range between 10 nm and 1000 nm.
|
Valid
Entry 481 Entry 676 Entry 499 |
17 |
The device as claimed in claim 16, wherein the height of said Fin active region from the surface of said second oxide layer is between 5 nm and 300 nm.
|
Valid
Entry 678 Entry 481 Entry 676 Entry 499 |
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Infringement
GlobalFoundries, Inc.
- 1 Detail
Accused Product | Patent # | Claim # | Outcome |
---|---|---|---|
14 nm bulk FinFET technologies820 chips821 chipsand Galaxy S7 edgeExynos 7 Octa 7420Exynos 7 Octa 7870Exynos 7 Quad 7570Exynos 8895Exynos 8 Octa 8890FX-14 ASIC systemGalaxy J7Galaxy Note5Galaxy S6Galaxy S6 ActiveGalaxy S6 edgeGalaxy S7Galaxy S7 EdgeGalaxy Tab A 10.1GloFo ChipsProcessor chips with FinFET TechnologyProcessor chips with Samsung FinFET TechnologyQualcomm ChipsSamsung FinFET ChipsSamsung FinFET ProductsSamsung FinFET Technology | US 6,885,055 B2 |
1, 2, 3, 4, 5, 6, 11, 12, 13, 15, 16, 17
|
Infringement
Entry 678Entry 481 Entry 676 Entry 499 |
Globalfoundries US Incorporated
- 1 Detail
Accused Product | Patent # | Claim # | Outcome |
---|---|---|---|
14 nm bulk FinFET technologies820 chips821 chipsand Galaxy S7 edgeExynos 7 Octa 7420Exynos 7 Octa 7870Exynos 7 Quad 7570Exynos 8895Exynos 8 Octa 8890FX-14 ASIC systemGalaxy J7Galaxy Note5Galaxy S6Galaxy S6 ActiveGalaxy S6 edgeGalaxy S7Galaxy S7 EdgeGalaxy Tab A 10.1GloFo ChipsProcessor chips with FinFET TechnologyProcessor chips with Samsung FinFET TechnologyQualcomm ChipsSamsung FinFET ChipsSamsung FinFET ProductsSamsung FinFET Technology | US 6,885,055 B2 |
1, 2, 3, 4, 5, 6, 11, 12, 13, 15, 16, 17
|
Infringement
Entry 678Entry 481 Entry 676 Entry 499 |
Qualcomm, Inc.
- 1 Detail
Accused Product | Patent # | Claim # | Outcome |
---|---|---|---|
14 nm bulk FinFET technologies820 chips821 chipsand Galaxy S7 edgeExynos 7 Octa 7420Exynos 7 Octa 7870Exynos 7 Quad 7570Exynos 8895Exynos 8 Octa 8890FX-14 ASIC systemGalaxy J7Galaxy Note5Galaxy S6Galaxy S6 ActiveGalaxy S6 edgeGalaxy S7Galaxy S7 EdgeGalaxy Tab A 10.1GloFo ChipsProcessor chips with FinFET TechnologyProcessor chips with Samsung FinFET TechnologyQualcomm ChipsSamsung FinFET ChipsSamsung FinFET ProductsSamsung FinFET Technology | US 6,885,055 B2 |
1, 2, 3, 4, 5, 6, 11, 12, 13, 15, 16, 17
|
Infringement
Entry 678Entry 481 Entry 676 Entry 499 |
Samsung Austin Semiconductor LLC
- 1 Detail
Accused Product | Patent # | Claim # | Outcome |
---|---|---|---|
14 nm bulk FinFET technologies820 chips821 chipsand Galaxy S7 edgeExynos 7 Octa 7420Exynos 7 Octa 7870Exynos 7 Quad 7570Exynos 8895Exynos 8 Octa 8890FX-14 ASIC systemGalaxy J7Galaxy Note5Galaxy S6Galaxy S6 ActiveGalaxy S6 edgeGalaxy S7Galaxy S7 EdgeGalaxy Tab A 10.1GloFo ChipsProcessor chips with FinFET TechnologyProcessor chips with Samsung FinFET TechnologyQualcomm ChipsSamsung FinFET ChipsSamsung FinFET ProductsSamsung FinFET Technology | US 6,885,055 B2 |
1, 2, 3, 4, 5, 6, 11, 12, 13, 15, 16, 17
|
Willful infringement
Entry 678Entry 481 Entry 676 Entry 499 |
Samsung Electronics America, Inc.
- 1 Detail
Accused Product | Patent # | Claim # | Outcome |
---|---|---|---|
14 nm bulk FinFET technologies820 chips821 chipsand Galaxy S7 edgeExynos 7 Octa 7420Exynos 7 Octa 7870Exynos 7 Quad 7570Exynos 8895Exynos 8 Octa 8890FX-14 ASIC systemGalaxy J7Galaxy Note5Galaxy S6Galaxy S6 ActiveGalaxy S6 edgeGalaxy S7Galaxy S7 EdgeGalaxy Tab A 10.1GloFo ChipsProcessor chips with FinFET TechnologyProcessor chips with Samsung FinFET TechnologyQualcomm ChipsSamsung FinFET ChipsSamsung FinFET ProductsSamsung FinFET Technology | US 6,885,055 B2 |
1, 2, 3, 4, 5, 6, 11, 12, 13, 15, 16, 17
|
Willful infringement
Entry 678Entry 481 Entry 676 Entry 499 |
Samsung Electronics Co. Ltd.
- 1 Detail
Accused Product | Patent # | Claim # | Outcome |
---|---|---|---|
14 nm bulk FinFET technologies820 chips821 chipsand Galaxy S7 edgeExynos 7 Octa 7420Exynos 7 Octa 7870Exynos 7 Quad 7570Exynos 8895Exynos 8 Octa 8890FX-14 ASIC systemGalaxy J7Galaxy Note5Galaxy S6Galaxy S6 ActiveGalaxy S6 edgeGalaxy S7Galaxy S7 EdgeGalaxy Tab A 10.1GloFo ChipsProcessor chips with FinFET TechnologyProcessor chips with Samsung FinFET TechnologyQualcomm ChipsSamsung FinFET ChipsSamsung FinFET ProductsSamsung FinFET Technology | US 6,885,055 B2 |
1, 2, 3, 4, 5, 6, 11, 12, 13, 15, 16, 17
|
Willful infringement
Entry 678Entry 481 Entry 676 Entry 499 |
Samsung Semiconductor Incorporated
- 1 Detail
Accused Product | Patent # | Claim # | Outcome |
---|---|---|---|
14 nm bulk FinFET technologies820 chips821 chipsand Galaxy S7 edgeExynos 7 Octa 7420Exynos 7 Octa 7870Exynos 7 Quad 7570Exynos 8895Exynos 8 Octa 8890FX-14 ASIC systemGalaxy J7Galaxy Note5Galaxy S6Galaxy S6 ActiveGalaxy S6 edgeGalaxy S7Galaxy S7 EdgeGalaxy Tab A 10.1GloFo ChipsProcessor chips with FinFET TechnologyProcessor chips with Samsung FinFET TechnologyQualcomm ChipsSamsung FinFET ChipsSamsung FinFET ProductsSamsung FinFET Technology | US 6,885,055 B2 |
1, 2, 3, 4, 5, 6, 11, 12, 13, 15, 16, 17
|
Willful infringement
Entry 678Entry 481 Entry 676 Entry 499 |
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Damages