A method of manufacturing a light emitting device, comprising: sequentially forming an N-type semiconductor layer, active layer, and P-type semiconductor layer on a substrate; forming an etching mask pattern, of which a side surface is not perpendicular to but inclined at a slope from a horizontal plane, on the P-type semiconductor layer; and removing the etching mask pattern and the P-type semiconductor layer exposed through the etching mask pattern, wherein forming the etching mask pattern comprises: forming a photoresist on the P-type semiconductor layer; exposing the photoresist to light; hard-baking and developing the photoresist; and etching a side surface of the developed photoresist to have the slope from the horizontal plane. view more

A light emitting device, comprising: a substrate; a plurality of light emitting cells arranged on the substrate, wherein each light emitting cell comprises: a first semiconductor layer and a second semiconductor layer; an inclined surface; and a current diffusion layer arranged on the second semiconductor layer; a first insulation layer arranged on each light emitting cell; a conductive material arranged on the first insulation layer to couple two of the light emitting cells; and a second insulation layer arranged on the conductive material, wherein the current diffusion layer comprises an opening and the conductive material is arranged in the opening, and the conductive material is coupled to the second semiconductor layer of each light emitting cell through the current diffusion layer. view more

The light emitting device of claim 1, wherein the substrate is exposed between the plurality of light emitting cells, and the first insulation layer is arranged on the exposed portion of the substrate.

The light emitting device of claim 1, wherein the second insulation layer corresponds to a contour of each light emitting cell.

The light emitting device of claim 1, wherein the inclined surface comprises a side surface of the first semiconductor layer.

The light emitting device of claim 9, wherein the inclined surface comprises a side surface of the second semiconductor layer.

The light emitting device of claim 1, wherein the first insulation layer comprises SiO<sub>2</sub>.

The light emitting device of claim 1, wherein the second insulation layer comprises a moisture proof material.

A light emitting device, comprising: a power source unit; a light emitting element comprising a plurality of light emitting cells connected in series; and a control unit configured to control a voltage waveform and a current waveform applied to the light emitting element, wherein the light emitting element comprises a rectifying bridge unit comprising a first diode, a second diode, a third diode, and a fourth diode, wherein the rectifying bridge unit is connected to the power source unit, and wherein the control unit comprises a first resistor connected in parallel to the plurality of light emitting cells. view more

The light emitting device of claim 1, wherein the control unit further comprises a capacitor connected in parallel to the first resistor.

The light emitting device of claim 4, wherein the control unit further comprises a second resistor connected in series to the plurality of light emitting cells.

A light emitting device, comprising: a power source unit; a light emitting element comprising a plurality of light emitting cells connected in series; and a control unit configured to control a voltage waveform and a current waveform applied to the light emitting element, wherein the control unit comprises a first resistor connected in parallel to the plurality of light emitting cells. view more

The light emitting device of claim 6, wherein the control unit further comprises a capacitor connected in parallel to the first resistor.

The light emitting device of claim 8, wherein the control unit further comprises a second resistor connected in series to the plurality of light emitting cells.

A light emitting diode, comprising: a substrate; a buffer layer disposed on the substrate; a gallium nitride-based n-type contact layer disposed on the buffer layer; a gallium nitride based p-type contact layer disposed on the gallium nitride-based n-type contact layer; an active layer interposed between the gallium nitride-based n-type contact layer and the gallium nitride-based p-type contact layer; a gallium nitride-based first lower semiconductor layer interposed between the buffer layer and the gallium nitride-based n-type contact layer; a gallium nitride-based first interlayer interposed between the gallium nitride-based first lower semiconductor layer and the gallium nitride-based n-type contact layer; and a gallium nitride-based second interlayer interposed between the gallium nitride-based first interlayer and the gallium nitride-based n-type contact layer, wherein the gallium nitride-based second interlayer has higher dislocation density than that of the gallium nitride-based first lower semiconductor layer and has dislocation density different from that of the gallium nitride-based first interlayer, wherein the gallium nitride-based first interlayer comprises a single composition and has lower dislocation density than that of the buffer layer and has higher dislocation density than that of the gallium nitride-based first lower semiconductor layer, and wherein the gallium nitride-based first interlayer comprises the same composition as that of the gallium nitride-based n-type contact layer. view more

A light emitting device, comprising: a light emitting cell array configured to receive an input voltage and comprising a plurality of light emitting cells connected in series on a substrate, the plurality of light emitting cells to emit light in response to the input voltage, the input voltage to periodically change during a period and to have a first voltage value, which does not turn on the plurality of light emitting cells, after a first peak value, wherein the light emitting device emits light comprising a periodically changing luminous intensity in response to the input voltage, the periodically changing luminous intensity of the light emitting device has a second peak value and a minimum value, the minimum value of the periodically changing luminous intensity is greater than zero when the input voltage has the first voltage value, and wherein each light emitting cell comprises an inclined side surface. view more

The light emitting device of claim 1, further comprising a bridge rectifier connected to the light emitting cell array and configured to receive the input voltage.

The light emitting device of claim 1, wherein the light emitting device comprises a plurality of light emitting cell arrays.

A light-emitting device, comprising: first and second lead frames spaced apart from each other, the first and second lead frames each comprising a first surface, an opposing second surface, and sidewalls arranged between the first surface and the second surface thereof, wherein the first and second lead frames each comprise three inset sidewalls that at least partially define a fixing space, the fixing space undercutting the first surfaces along three sides of the first and second lead frames; a light-emitting diode chip arranged on the first surface of the first or second lead frame; and a resin part disposed in the fixing space to support the first and second lead frames. view more

The light-emitting device of claim 1, wherein the first surface and the second surface of the at least one of the first and second lead frames comprise different surface areas from each other.

The light-emitting device of claim 1, wherein the inset sidewalls form a stepped structure.

The light-emitting device of claim 1, wherein the fixing space comprises a fixing hole formed in at least one of the first and second lead frames.

The light-emitting device of claim 8, wherein the fixing hole extends through a body of at least one of the first lead frame and the second lead frame.

A light-emitting device, comprising: first and second lead frames spaced apart from each other, the first and second lead frames each comprising a first surface, an opposing second surface, and sidewalls arranged between the first surface and the second surface thereof, wherein the first and second lead frames comprise inset sidewalls, the inset sidewalls undercutting and surrounding at least three continuous sides of the first surfaces of the first and second lead frames, and at least one of the first surface, the second surface, and the sidewalls of the first and second lead frames partially defining a fixing space; a light-emitting diode chip arranged on the first surface of the first or second lead frame; and a resin part disposed in the fixing space to support the first and second lead frames. view more

The light-emitting device of claim 12, further comprising a fixing hole formed in at least one of the first and second lead frames, and exposed to the fixing space at one of the inset sidewalls.

The light-emitting device of claim 14, wherein the sidewalls comprise stepped portions connected to the inset sidewalls.

The light-emitting device of claim 15, wherein: the fixing space surrounds the at least three continuous sides of each of the first and second lead frames; and the fixing space is disposed in a facing region between the first and second lead frames.

A light-emitting device, comprising: a light emitting diode (LED) chip comprising a plurality of light emitting cells connected in series, parallel, or series-parallel; a transparent member covering the LED chip; a first phosphor configured to be excited by light emitted from the LED chip and to emit light in a visible light range; and a second phosphor configured to be excited by light emitted from the LED chip and to emit light in a visible wavelength range, wherein the first phosphor has a longer decay time than the decay time of the second phosphor. view more

A light emitting diode, comprising: a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting being spaced apart from each other; a first transparent electrode layer disposed on the first light emitting cell, the first transparent electrode layer being electrically connected to the first light emitting cell; a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer; an interconnection electrically connecting the first light emitting cell and the second light emitting cell; and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell, wherein the current blocking layer and the insulation layer are connected to each other. view more

The light emitting diode of claim 1, wherein each of the first and second light emitting cells comprises a lower semiconductor layer, an upper semiconductor layer, and an active layer disposed between the lower semiconductor layer and the upper semiconductor layer, wherein the first transparent electrode layer is electrically connected to the upper semiconductor layer, and wherein the interconnection contacts the first transparent electrode layer at a first end thereof and the lower semiconductor layer of the second light emitting cell at a second end thereof. view more

The light emitting diode of claim 9, wherein the interconnection is directly connected to the first transparent electrode layer over an entire overlapping area therebetween.

The light emitting diode of claim 10, wherein the current blocking layer is disposed at least under the direct connection area between the first transparent electrode layer and the interconnection.

A light-emitting diode package, comprising: a body and leads, the body comprising a mounting surface; a light-emitting structure disposed on the mounting surface, the light-emitting structure comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer; a phosphor member disposed on the light-emitting structure; and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface, wherein the distributed Bragg reflector comprises a first distributed Bragg reflector and a second distributed Bragg reflector; and wherein an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector. view more

The light-emitting diode package of claim 1, wherein the light-emitting structure is disposed on the distributed Bragg reflector.

The light-emitting diode package of claim 2, wherein the distributed Bragg reflector contacts the light-emitting structure.

The light-emitting diode package of claim 1, wherein the first distributed Bragg reflector is disposed between the light-emitting structure and the second distributed Bragg reflector.

The light-emitting diode package of claim 1, further comprising wiring bonded to the light-emitting structure, wherein the distributed Bragg reflector is disposed in a first region spaced apart from a second region where the wiring is bonded to the light-emitting structure. view more

The light-emitting diode package of claim 1, further comprising a first insulating layer covering a front surface of the light-emitting structure.

The light-emitting diode package of claim 6, further comprising a second insulating layer and wiring disposed on the first insulating layer, the second insulating layer covering the wiring and the first insulating layer.

The light-emitting diode package of claim 7, wherein the wiring connects the first conductive-type semiconductor layer or the second conductive-type semiconductor layer of the light-emitting structure through an opening in the first insulating layer.

The light-emitting diode package of claim 7, wherein the second insulating layer is thinner than the first insulating layer.

The light-emitting diode package of claim 1, wherein: the first distributed Bragg reflector comprises higher reflectivity for light in a green wavelength range or a red wavelength range than for light in a blue wavelength range; and the second distributed Bragg reflector comprises higher reflectivity for light in a blue wavelength range than for light in a red wavelength range. view more

The light-emitting diode package of claim 10, wherein a central wavelength of the first distributed Bragg reflector is longer than a central wavelength of the second distributed Bragg reflector.

The light-emitting diode package of claim 1, wherein the light-emitting structure is configured to emit light in a blue wavelength range.

A light emitting device, comprising: a substrate; a first light emitting cell disposed on the substrate and a second light emitting cell disposed on the substrate, wherein the first and second light emitting cells comprise:a first semiconductor layer and a second semiconductor layer;an active layer disposed between the first and the second semiconductors layers; anda first inclined surface; a first conductive material disposed on the second semiconductor layer of the second light emitting cell; a first insulation layer that overlaps the first conductive material and the first and second light emitting cells; a second conductive material that overlaps the first insulation layer and electrically connects the first light emitting cell and the second light emitting cell; and a second insulation layer that overlaps the second conductive material, wherein both the first insulation layer and the second insulation layer comprise a light transmitting material; and wherein the first inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane of the substrate. view more

The light emitting device of claim 1, wherein the first conductive material comprises a transparent electrode disposed on the second semiconductor layer of the second light emitting cell.

The light emitting device of claim 2, wherein the transparent electrode comprise at least one of indium tin oxide (ITO), nickel (Ni), or Gold (Au).

The light emitting device of claim 1, wherein: the first inclined surface comprises the second semiconductor layer and the active layer, the first and second light emitting cells further comprise a second inclined surface comprising the second semiconductor layer and the active layer; and the second inclined surface has a slope of approximately 20° to approximately 80° from the horizontal plane of the substrate. view more