BeSang Trains “Vertical Memory Cells” Patent on Intel and Micron

BeSang Inc. has initiated what appears to be its first litigation, simultaneously suing Intel (3:23-cv-00113) in the District of Oregon and Micron Technology (2:23-cv-00028) in the Eastern District of Texas. The defendants are accused of infringing a single “semiconductor memory structure” patent through the provision of 3D NAND Memory products that feature a “CMOS under array” (CuA) structure and “vertical floating gate architecture”. In each complaint, BeSang alleges willful infringement, based on separate backstories.