Korea Advanced Institute Sues Global Foundries, Samsung, and Qualcomm over FinFET Device Patent

December 2, 2016

KAIST IP US LLC, a Texas entity formed in July 2016 apparently to assert at least one patent (6,885,055), has filed suit against Global Foundries, Samsung, and Qualcomm (2:16-cv-01314) in an effort to do just that. The ‘055 patent generally relates to the fabrication of certain double-gate FinFET devices. The new complaint alleges that the “pioneering” work of named inventor Jong-Ho Lee, IEEE fellow and now a “vice dean” of the College of Engineering and a professor in the Electrical and Computer Engineering department at Seoul National University, allowed improved performance and lower consumption in a smaller area as compared to the more traditional use of purely planar transistors. The accused products are the defendants’ chips made using Samsung’s 14 nm FinFET process, as well as products (e.g. Samsung’s Galaxy mobile devices) that incorporate them.

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