Method of endpoint detection of plasma etching process using multivariate analysis

• US 10,002,804 B2
• Filed: 02/25/2016
• Issued: 06/19/2018
• Est. Priority Date: 10/17/2012
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Chen, Yan, Vuong, Vi, Komarov, Serguei
• Primary Examiner(s): Pham, Thomas
• Application Number:
  US15/053,368
• Publication Number:
  US 20160172258A1
• Time in Patent Office: 845 Days
• CPC Class Codes: G06F 17/16 Matrix or vector computation , e.g. matrix-matrix or matrix-vector multiplication, matrix factorization matrix transposition G06F7/78
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

Described is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. Optical emission spectroscopy (OES) data are acquired by a spectrometer attached to a plasma etch processing tool. The acquired time-evolving spectral data are first filtered and demeaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. A functional form incorporating multiple trends may be used to more precisely determine the endpoint of an etch process. A method for calculating principal component weights prior to actual etching, based on OES data collected from previous etch processing, is disclosed, which method facilitates rapid calculation of trends and functional forms involving multiple trends, for efficient and accurate in-line determination of etch process endpoint.

Claims

1. A method for in-situ determination of etch process endpoint, comprising:

providing a mean optical emission spectroscopy (OES) data matrix [S_avg] from multiple historical OES data matrices each corresponding to a respective historical etch process run, wherein each historical OES data matrix is an n×

m matrix with rows corresponding to n instants in time when OES data are taken, and columns correspond to an intensity pixel number m as measured by an OES detector, and wherein the mean OES data matrix [S_avg] is an n×

m matrix of average values calculated from corresponding OES data from said multiple historical OES data matrices;

providing a principal component weights vector [P] from the mean OES data matrix [Savg];

loading a substrate into a plasma etch processing tool;

igniting a plasma in the plasma etch processing tool to initiate an etch process;

acquiring current optical emission spectroscopy (OES) data sets from a spectrometer on the plasma etch processing tool at predetermined time intervals during the etch process;

from each acquired current optical emission spectroscopy (OES) data set, subtracting the provided mean optical emission spectroscopy (OES) data matrix [S_avg], to de-mean each acquired current optical emission spectroscopy (OES) data set without normalizing the current (OES) data set;

transforming each acquired, de-meaned, and non-normalized current optical emission spectroscopy (OES) data set into transformed optical emission spectroscopy (OES) data, by calculating at least one element of a transformed optical emission spectroscopy (OES) data vector [T] using the provided principal component weights vector [P];

from the calculated at least one element of the transformed optical emission spectroscopy (OES) data vector [T], further calculating a trend variable f(Ti) from multiple principal components; and

detecting an endpoint of the etch process from the further calculated values of the trend variable f(Ti) during the etch process.

2. The method of claim 1, further comprising:

stopping the etch process upon endpoint detection.

3. The method of claim 1, wherein a functional form of the trend variable f(Ti) is a calculated single element of the transformed optical emission spectroscopy (OES) data vector [T].

4. The method of claim 1, wherein a functional form of the trend variable f(Ti) contains a ratio of two calculated elements of the transformed optical emission spectroscopy (OES) data vector [T].

5. The method of claim 1, further comprising:

providing a previously calculated and stored minimum value min(Ti) of at least one element of the transformed optical emission spectroscopy (OES) data vector [T].

6. The method of claim 5, wherein a functional form f(Ti) of the trend variable f(Ti) is an element of the transformed optical emission spectroscopy (OES) data vector [T] from which the twice the minimum value min(Ti) of the same element of the transformed optical emission spectroscopy (OES) data vector [T] has been subtracted.

7. The method of claim 5, wherein a selected functional form f(Ti) of the trend variable f(Ti) is a ratio of two elements of the transformed optical emission spectroscopy (OES) data vector [T], wherein twice the minimum values min(Ti) of each of the elements of the transformed optical emission spectroscopy (OES) data vector [T] have been subtracted from the respective elements of the transformed optical emission spectroscopy (OES) data vector [T] prior to computing the ratio.

8. The method of claim 7, wherein the selected functional form f(T_i) of the trend variable f(T_i) involves a second (T₂) and third (T₃) element of the transformed optical emission spectroscopy (OES) data vector [T], and is of the form f(T_i)=(T₂−

2 min(T₂))²/(T₃−

2·

min(T₃))².

9. The method of claim 1, wherein the step of detecting an endpoint of the etch process comprises evaluating a differential of the trend variable f(T_i) during the etch process and detecting the endpoint of the etch process from the differentiated trend variable f(T_i).