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Semiconductor device and electronic device

  • US 10,002,888 B2
  • Filed: 08/01/2017
  • Issued: 06/19/2018
  • Est. Priority Date: 12/11/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor; and

    a second transistor,wherein one of a source and a drain of the second transistor is electrically connected to a gate of the first transistor,wherein the first transistor comprises a gate electrode layer, a gate insulating layer over the gate electrode layer, a first oxide semiconductor layer over the gate insulating layer and a second oxide semiconductor layer over the first oxide semiconductor layer,wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises In, Ga and Zn, andwherein the second oxide semiconductor layer comprises a c-axis aligned crystal.

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