Housing for an infrared radiation micro device and method for fabricating such housing
First Claim
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1. A method of housing an infrared radiation micro unit the method having the following steps:
- providing a housing comprising a cover, a substrate, and a silicon distance frame, wherein the substrate is part of a substrate wafer and the cover is part of a cover wafer;
masking the cover with a pattern configured to form an area with a surface texture, the surface texture provided to reduce an effective refractive index of the cover;
etching the cover as patterned and creating the area with the surface texture comprising one of elevations and depressions that reduce the effective refractive index of the cover within the area;
providing the silicon distance frame on a substrate side of the cover, wherein the silicon distance frame is provided by;
depositing an unstructured TEOS layer on the cover comprising the surface texture, thus also covering the area of reduced effective refractive index with the unstructured TEOS layer;
depositing by a CVD a silicon layer on the unstructured TEOS Layer;
masking the CVD deposited silicon layer with a pattern that defines the silicon distance frame;
etching the CVD deposited silicon layer to provide the silicon distance frame;
removing the unstructured TEOS layer from the cover, outside the silicon distance frame, to expose the surface texture having the reduced effective refractive index;
bonding of substrate and cover with the silicon distance frame being intermediate, whereby substrate, cover and distance frame form a cavity, housing the infrared radiation micro unit to provide an infrared radiation micro device on a wafer level; and
wherein the cover wafer is diced and the substrate wafer is not diced, exposing the undiced substrate wafer with the diced cover wafer for electrical device characterization to a test gas atmosphere, measuring a vacuum level, thereby identifying leaking infrared radiation micro device on the undiced substrate wafer for a later rejection.
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Abstract
Infrared radiation micro device, cover for such a device and method for its fabrication, the device comprising a substrate and a cover and an infrared radiation detecting, emitting or reflecting infrared micro unit, the infrared micro unit being arranged in a cavity defined between the substrate and the cover, the cover comprising an antireflective surface texture to enhance the transmissibility of infrared radiation, wherein a distance frame formed in an additive process on the substrate side of the cover and/or the cover side of the substrate is arranged between substrate and cover.
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10 Claims
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1. A method of housing an infrared radiation micro unit the method having the following steps:
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providing a housing comprising a cover, a substrate, and a silicon distance frame, wherein the substrate is part of a substrate wafer and the cover is part of a cover wafer; masking the cover with a pattern configured to form an area with a surface texture, the surface texture provided to reduce an effective refractive index of the cover; etching the cover as patterned and creating the area with the surface texture comprising one of elevations and depressions that reduce the effective refractive index of the cover within the area; providing the silicon distance frame on a substrate side of the cover, wherein the silicon distance frame is provided by; depositing an unstructured TEOS layer on the cover comprising the surface texture, thus also covering the area of reduced effective refractive index with the unstructured TEOS layer; depositing by a CVD a silicon layer on the unstructured TEOS Layer; masking the CVD deposited silicon layer with a pattern that defines the silicon distance frame; etching the CVD deposited silicon layer to provide the silicon distance frame; removing the unstructured TEOS layer from the cover, outside the silicon distance frame, to expose the surface texture having the reduced effective refractive index; bonding of substrate and cover with the silicon distance frame being intermediate, whereby substrate, cover and distance frame form a cavity, housing the infrared radiation micro unit to provide an infrared radiation micro device on a wafer level; and wherein the cover wafer is diced and the substrate wafer is not diced, exposing the undiced substrate wafer with the diced cover wafer for electrical device characterization to a test gas atmosphere, measuring a vacuum level, thereby identifying leaking infrared radiation micro device on the undiced substrate wafer for a later rejection. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification