Semiconductor device and manufacturing method thereof
First Claim
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1. A semiconductor device, comprising:
- channel layers disposed and vertically arranged over a substrate;
a source/drain region disposed over the substrate;
a gate dielectric layer disposed on and wrapping each of the channel layers;
a gate electrode layer disposed on the gate dielectric layer and wrapping each of the channel layers; and
sidewall spacers disposed on opposing sidewalls of the gate electrode layer, wherein;
each of the channel layers includes a semiconductor wire made of a first semiconductor material,the semiconductor wire extends into the source/drain region,the semiconductor wire in the source/drain regions is wrapped around by a second semiconductor material, andan end portion of the second semiconductor material penetrates into one of the sidewall spacers and is in contact with the channel layers under the one of the sidewall spacers.
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Abstract
A semiconductor device includes channel layers disposed over a substrate, a source/drain region disposed over the substrate, a gate dielectric layer disposed on and wrapping each of the channel layers, and a gate electrode layer disposed on the gate dielectric layer and wrapping each of the channel layers. Each of the channel layers includes a semiconductor wire made of a first semiconductor material. The semiconductor wire extends into the source/drain region. The semiconductor wire in the source/drain regions is wrapped around by a second semiconductor material.
12 Citations
19 Claims
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1. A semiconductor device, comprising:
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channel layers disposed and vertically arranged over a substrate; a source/drain region disposed over the substrate; a gate dielectric layer disposed on and wrapping each of the channel layers; a gate electrode layer disposed on the gate dielectric layer and wrapping each of the channel layers; and sidewall spacers disposed on opposing sidewalls of the gate electrode layer, wherein; each of the channel layers includes a semiconductor wire made of a first semiconductor material, the semiconductor wire extends into the source/drain region, the semiconductor wire in the source/drain regions is wrapped around by a second semiconductor material, and an end portion of the second semiconductor material penetrates into one of the sidewall spacers and is in contact with the channel layers under the one of the sidewall spacers. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device, comprising:
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a channel layer disposed over a substrate; a source/drain region disposed over the substrate; a gate dielectric layer disposed on the channel layer; and a gate electrode layer disposed on the gate dielectric layer, wherein; the channel layer includes first semiconductor wires made of a first semiconductor material and second semiconductor wires made of a second semiconductor material different from the first semiconductor material, stacked alternately, the first semiconductor wires extends into the source/drain region, and the first semiconductor wires in the source/drain regions are wrapped around by a third semiconductor material, respectively. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device, comprising:
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a first field effect transistor (FET) including; first channel layers disposed over a substrate; a first source/drain region disposed over the substrate; a first gate dielectric layer disposed on and wrapping each of the first channel layers; and a first gate electrode layer disposed on the first gate dielectric layer and wrapping each of the first channel layers; and a second FET including; a second channel layer disposed over the substrate; a second source/drain region disposed over the substrate; a second gate dielectric layer disposed on the second channel layer; and a second gate electrode layer disposed on the second gate dielectric layer, wherein; each of the first channel layers includes a semiconductor wire made of a first semiconductor material, the semiconductor wire extends into the first source/drain region, the semiconductor wire in the first source/drain regions is wrapped around by a second semiconductor material, the second channel layer includes second semiconductor wires made of a third semiconductor material and third semiconductor wires made of a fourth semiconductor material different from the third semiconductor material, stacked alternately, the second semiconductor wires extend into the second source/drain region, and the second semiconductor wires in the source/drain regions are wrapped around by a fifth semiconductor material, respectively.
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Specification