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Semiconductor device, manufacturing method of the same, or display device including the same

  • US 10,002,970 B2
  • Filed: 04/25/2016
  • Issued: 06/19/2018
  • Est. Priority Date: 04/30/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor; and

    a second transistor,wherein the first transistor includes;

    a first gate electrode;

    a first insulating film over the first gate electrode;

    a first oxide semiconductor film over the first insulating film;

    a source electrode electrically connected to the first oxide semiconductor film;

    a drain electrode electrically connected to the first oxide semiconductor film;

    a second insulating film over the first oxide semiconductor film;

    a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film; and

    a third insulating film over the second oxide semiconductor film,wherein the second transistor includes;

    a third oxide semiconductor film over the second insulating film, the third oxide semiconductor film including a channel region, a source region, and a drain region;

    a fourth insulating film over the channel region;

    a third gate electrode over the fourth insulating film; and

    the third insulating film over the source region and the drain region.

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