Semiconductor device, manufacturing method of the same, or display device including the same
First Claim
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1. A semiconductor device comprising:
- a first transistor; and
a second transistor,wherein the first transistor includes;
a first gate electrode;
a first insulating film over the first gate electrode;
a first oxide semiconductor film over the first insulating film;
a source electrode electrically connected to the first oxide semiconductor film;
a drain electrode electrically connected to the first oxide semiconductor film;
a second insulating film over the first oxide semiconductor film;
a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film; and
a third insulating film over the second oxide semiconductor film,wherein the second transistor includes;
a third oxide semiconductor film over the second insulating film, the third oxide semiconductor film including a channel region, a source region, and a drain region;
a fourth insulating film over the channel region;
a third gate electrode over the fourth insulating film; and
the third insulating film over the source region and the drain region.
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Abstract
To provide a novel semiconductor device including an oxide semiconductor film. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film, and a third insulating film over the second oxide semiconductor film. The second transistor includes a third oxide semiconductor film including a channel region, a source region, and a drain region over the second insulating film, a fourth insulating film over the channel region, a third gate electrode over the fourth insulating film, and the third insulating film over the source region and the drain region.
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Citations
17 Claims
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1. A semiconductor device comprising:
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a first transistor; and a second transistor, wherein the first transistor includes; a first gate electrode; a first insulating film over the first gate electrode; a first oxide semiconductor film over the first insulating film; a source electrode electrically connected to the first oxide semiconductor film; a drain electrode electrically connected to the first oxide semiconductor film; a second insulating film over the first oxide semiconductor film; a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film; and a third insulating film over the second oxide semiconductor film, wherein the second transistor includes; a third oxide semiconductor film over the second insulating film, the third oxide semiconductor film including a channel region, a source region, and a drain region; a fourth insulating film over the channel region; a third gate electrode over the fourth insulating film; and the third insulating film over the source region and the drain region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A display device comprising:
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a driver circuit portion; and a pixel portion, wherein the driver circuit portion includes a first transistor, the first transistor including; a first gate electrode; a first insulating film over the first gate electrode; a first oxide semiconductor film over the first insulating film; a source electrode electrically connected to the first oxide semiconductor film; a drain electrode electrically connected to the first oxide semiconductor film; a second insulating film over the first oxide semiconductor film; a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film; and a third insulating film over the second oxide semiconductor film, and wherein the pixel portion includes a second transistor, the second transistor including; a third oxide semiconductor film over the second insulating film, the third oxide semiconductor film including a channel region, a source region, and a drain region; a fourth insulating film over the channel region; a third gate electrode over the fourth insulating film; and the third insulating film over the source region and the drain region. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsKoezuka, Junichi, Jintyou, Masami, Oikawa, Yoshiaki
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Primary Examiner(s)Rodela, Eduardo A
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Application NumberUS15/137,087Publication NumberTime in Patent Office785 DaysField of SearchUS Class CurrentCPC Class CodesG02F 1/13624 having more than one switch...G02F 1/1368 in which the switching elem...G06F 2203/04103 Manufacturing, i.e. details...G06F 3/0416 Control or interface arrang...G06F 3/0443 using a single layer of sen...G06F 3/0446 using a grid-like structure...H01L 27/1225 with semiconductor material...H01L 27/1251 comprising TFTs having a di...H01L 27/1255 integrated with passive dev...H01L 29/045 by their particular orienta...H01L 29/42384 for thin film field effect ...H01L 29/49 Metal-insulator-semiconduct...H01L 29/4908 for thin film semiconductor...H01L 29/78645 with multiple gateH01L 29/78648 arranged on opposing sides ...H01L 29/78687 with a multilayer structure...H01L 29/7869 having a semiconductor body...
