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Surface treatment of a semiconductor light emitting device

  • US 10,002,988 B2
  • Filed: 09/22/2016
  • Issued: 06/19/2018
  • Est. Priority Date: 10/06/2011
  • Status: Active Grant
First Claim
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1. A method comprising:

  • roughening a light extracting surface of a semiconductor structure, the semiconductor structure comprising a light emitting layer; and

    after said roughening, reducing the mean surface roughness of the light extracting surface.

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