Silicon light trap devices, systems and methods
First Claim
Patent Images
1. A method of forming a silicon-on-nothing structure, comprising:
- providing a silicon structure;
etching a plurality of trenches in the silicon structure;
exposing the silicon structure to a hydrogen atmosphere;
performing reflow or epitaxy,wherein a light trap structure comprised of respective light trap elements is formed from the plurality of trenches; and
forming a roof structure on the light trap structure.
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Abstract
Embodiments relate to buried structures for silicon devices which can alter light paths and thereby form light traps. Embodiments of the lights traps can couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device, which can increase efficiency, improve device timing and provide other advantages appreciated by those skilled in the art.
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Citations
18 Claims
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1. A method of forming a silicon-on-nothing structure, comprising:
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providing a silicon structure; etching a plurality of trenches in the silicon structure; exposing the silicon structure to a hydrogen atmosphere; performing reflow or epitaxy, wherein a light trap structure comprised of respective light trap elements is formed from the plurality of trenches; and forming a roof structure on the light trap structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a silicon-on-nothing structure, comprising:
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providing a silicon structure; etching a plurality of trenches in the silicon structure; exposing the silicon structure to a hydrogen atmosphere; and performing reflow or epitaxy, wherein a light trap structure comprised of respective light trap elements is formed from the plurality of trenches; and forming a photo-detector between the light trap structure and the surface of the silicon-on-nothing structure. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification