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Silicon light trap devices, systems and methods

  • US 10,007,056 B2
  • Filed: 12/23/2016
  • Issued: 06/26/2018
  • Est. Priority Date: 10/18/2012
  • Status: Active Grant
First Claim
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1. A method of forming a silicon-on-nothing structure, comprising:

  • providing a silicon structure;

    etching a plurality of trenches in the silicon structure;

    exposing the silicon structure to a hydrogen atmosphere;

    performing reflow or epitaxy,wherein a light trap structure comprised of respective light trap elements is formed from the plurality of trenches; and

    forming a roof structure on the light trap structure.

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