Adaptive temperature and memory parameter throttling
First Claim
1. A method for temperature throttling in a memory device, the method comprising:
- determining a health value of the memory device;
modifying a plurality of temperature throttling thresholds based on the health value of the memory device, wherein each of the temperature throttling thresholds comprises a temperature above which the memory device is throttled differently; and
throttling the memory device when a temperature of the memory device exceeds each of the temperature throttling thresholds, wherein the throttling comprises reducing a performance of the memory device by modifying a programming speed or programming voltage, further wherein each of the temperature throttling thresholds are associated with a different modification of the programming speed or programming value.
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Abstract
A storage device with a memory may modify throttling to reduce cross temperature effects. The decision to throttle may be based on a memory device temperature (i.e. temperature throttling) or may be based on the memory device'"'"'s health, usage, or performance (e.g. hot count or bit error rate). Temperature throttling may be implemented that considers the memory device'"'"'s health, usage, or performance (e.g. hot count or bit error rate). Likewise, throttling based on the memory device'"'"'s health, usage, or performance may utilize the memory device'"'"'s temperature to optimize throttling time. For example, a test mode matrix (TMM) may be modified to depend on temperature.
15 Citations
14 Claims
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1. A method for temperature throttling in a memory device, the method comprising:
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determining a health value of the memory device; modifying a plurality of temperature throttling thresholds based on the health value of the memory device, wherein each of the temperature throttling thresholds comprises a temperature above which the memory device is throttled differently; and throttling the memory device when a temperature of the memory device exceeds each of the temperature throttling thresholds, wherein the throttling comprises reducing a performance of the memory device by modifying a programming speed or programming voltage, further wherein each of the temperature throttling thresholds are associated with a different modification of the programming speed or programming value. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A memory device comprising:
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a temperature sensor configured to measure a temperature of the memory device; a test mode matrix with a plurality of testing parameters for the memory device that are dependent on the temperature, wherein the testing parameters comprise at least programming settings; and throttling circuitry configured to throttle the memory device based on the temperature to reduce a cross temperature, wherein the cross temperature comprises a difference in temperature when writing data and temperature when reading data. - View Dependent Claims (10, 11, 12, 13, 14)
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Specification