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Driving method of liquid crystal display device

  • US 10,008,169 B2
  • Filed: 07/11/2017
  • Issued: 06/26/2018
  • Est. Priority Date: 07/01/2010
  • Status: Expired due to Fees
First Claim
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1. A liquid crystal display device comprising:

  • a pixel portion comprising;

    first to fourth conductive layers;

    a semiconductor layer;

    first and second insulating layers; and

    a liquid crystal,wherein;

    the first insulating layer is located over the first conductive layer;

    the semiconductor layer is located over the first insulating layer;

    the second and third conductive layers are in the same layer and located over the semiconductor layer;

    the second insulating layer is located over the second and third conductive layers;

    the fourth conductive layer is located over the second insulating layer;

    the third conductive layer is electrically connected to the fourth conductive layer in a contact hole which is located in the second insulating layer;

    a part of the first conductive layer is configured to be a gate of a transistor;

    a part of the first insulating layer is configured to be a gate insulating layer of the transistor;

    the second conductive layer is configured to be one of a source and a drain of the transistor;

    the second conductive layer is configured to supply an image signal;

    the third conductive layer is configured to be the other of the source and the drain of the transistor;

    the fourth conductive layer is configured to apply an electric field to the liquid crystal;

    the first conductive layer extends in a first direction in the pixel portion;

    the second conductive layer extends in a second direction in the pixel portion;

    the first direction intersects with the second direction;

    the whole of the semiconductor layer overlaps with the first conductive layer in the pixel portion;

    in a periphery of the semiconductor layer in the pixel portion, the third conductive layer comprises a region in which the third conductive layer overlaps with the first conductive layer with the first insulating layer therebetween;

    no capacitor line is located in the pixel portion;

    the semiconductor layer comprises an oxide semiconductor;

    the oxide semiconductor comprises indium, gallium, and zinc and comprises a region where a carrier density is less than 1×

    1014/cm3; and

    the oxide semiconductor comprises a crystal which is c-axis-aligned.

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