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Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device

  • US 10,008,386 B2
  • Filed: 09/12/2016
  • Issued: 06/26/2018
  • Est. Priority Date: 09/12/2016
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device, comprising:

  • growing a silicon oxynitride (SiON) layer on a surface region of a silicon-germanium (SiGe) layer using a first oxynitridation process;

    removing the SiON layer from the surface region of the SiGe layer; and

    growing a silicon dioxide layer on the surface region of the SiGe layer using a second oxynitridation process, which is substantially the same as the first oxynitridation process, wherein the silicon dioxide layer is devoid of germanium oxide and nitrogen;

    wherein the first oxynitridation process is configured to chemically treat the surface region of the SiGe layer in a way which prevents the formation of germanium oxide, and which prevents the incorporation of nitrogen within the silicon dioxide layer, during growth of the silicon dioxide layer.

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