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Dense arrays and charge storage devices

  • US 10,008,511 B2
  • Filed: 12/02/2016
  • Issued: 06/26/2018
  • Est. Priority Date: 08/14/2000
  • Status: Expired due to Fees
First Claim
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1. A memory device comprising at least one memory cell, wherein each memory cell of the memory device comprises:

  • a stack including a first dielectric region, a second dielectric region that is spaced from the first dielectric region, and a charge storage region configured to trap electrical charges and contacting the first dielectric region and the second dielectric region;

    a p-doped region comprising a p-doped semiconductor material and contacting a first horizontal surface of the stack; and

    an n-doped region comprising an n-doped semiconductor material,wherein at least one of the p-doped region and the n-doped region is in physical contact with the first dielectric region.

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