Dense arrays and charge storage devices
First Claim
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1. A memory device comprising at least one memory cell, wherein each memory cell of the memory device comprises:
- a stack including a first dielectric region, a second dielectric region that is spaced from the first dielectric region, and a charge storage region configured to trap electrical charges and contacting the first dielectric region and the second dielectric region;
a p-doped region comprising a p-doped semiconductor material and contacting a first horizontal surface of the stack; and
an n-doped region comprising an n-doped semiconductor material,wherein at least one of the p-doped region and the n-doped region is in physical contact with the first dielectric region.
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Abstract
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
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Citations
18 Claims
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1. A memory device comprising at least one memory cell, wherein each memory cell of the memory device comprises:
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a stack including a first dielectric region, a second dielectric region that is spaced from the first dielectric region, and a charge storage region configured to trap electrical charges and contacting the first dielectric region and the second dielectric region; a p-doped region comprising a p-doped semiconductor material and contacting a first horizontal surface of the stack; and an n-doped region comprising an n-doped semiconductor material, wherein at least one of the p-doped region and the n-doped region is in physical contact with the first dielectric region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification