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Varied STI liners for isolation structures in image sensing devices

  • US 10,008,531 B2
  • Filed: 04/13/2015
  • Issued: 06/26/2018
  • Est. Priority Date: 03/12/2013
  • Status: Active Grant
First Claim
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1. An integrated circuit device comprising:

  • a sensor element isolated by a first isolation structure and a circuit element isolated by a second isolation structure;

    wherein the first isolation structure is disposed in a substrate, the first isolation structure having a first liner layer and a first trench fill material, the first liner layer having a first thickness that is less than or equal to about 20 Angstroms, andwherein the second isolation structure is disposed in the substrate, the second isolation structure having a second liner layer and a second trench fill material, the second liner layer having a second thickness that is greater than or equal to about 100 Angstroms, and the second isolation structure having a depth that is greater than the first isolation structure; and

    wherein a portion of the substrate adjacent to the first isolation structure includes a junction isolation implantation region, and wherein a portion of the substrate adjacent to the second isolation structure is free of the junction isolation implantation region.

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