Varied STI liners for isolation structures in image sensing devices
First Claim
1. An integrated circuit device comprising:
- a sensor element isolated by a first isolation structure and a circuit element isolated by a second isolation structure;
wherein the first isolation structure is disposed in a substrate, the first isolation structure having a first liner layer and a first trench fill material, the first liner layer having a first thickness that is less than or equal to about 20 Angstroms, andwherein the second isolation structure is disposed in the substrate, the second isolation structure having a second liner layer and a second trench fill material, the second liner layer having a second thickness that is greater than or equal to about 100 Angstroms, and the second isolation structure having a depth that is greater than the first isolation structure; and
wherein a portion of the substrate adjacent to the first isolation structure includes a junction isolation implantation region, and wherein a portion of the substrate adjacent to the second isolation structure is free of the junction isolation implantation region.
1 Assignment
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Accused Products
Abstract
An integrated circuit device incorporating a plurality of isolation trench structures configured for disparate applications and a method of forming the integrated circuit are disclosed. In an exemplary embodiment, a substrate having a first region and a second region is received. A first isolation trench is formed in the first region, and a second isolation trench is formed in the second region. A first liner layer is formed in the first isolation trench, and a second liner layer is formed in the second isolation trench. The second liner layer has a physical characteristic that is different from a corresponding physical characteristic of the first liner layer. An implantation procedure is performed on the second isolation trench and the second liner layer formed therein. The physical characteristic of the second liner layer may be selected to enhance an implantation depth or an implantation uniformity compared to the first liner layer.
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Citations
18 Claims
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1. An integrated circuit device comprising:
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a sensor element isolated by a first isolation structure and a circuit element isolated by a second isolation structure; wherein the first isolation structure is disposed in a substrate, the first isolation structure having a first liner layer and a first trench fill material, the first liner layer having a first thickness that is less than or equal to about 20 Angstroms, and wherein the second isolation structure is disposed in the substrate, the second isolation structure having a second liner layer and a second trench fill material, the second liner layer having a second thickness that is greater than or equal to about 100 Angstroms, and the second isolation structure having a depth that is greater than the first isolation structure; and wherein a portion of the substrate adjacent to the first isolation structure includes a junction isolation implantation region, and wherein a portion of the substrate adjacent to the second isolation structure is free of the junction isolation implantation region. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An integrated circuit device comprising:
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a sensor element disposed between first isolation structures in a substrate, each of the first isolation structures including a first liner disposed on a portion of a substrate including a junction isolation implantation region; and a transistor disposed between second isolation structures in a substrate, each of the second isolation structures including a second liner disposed on a portion of the substrate free of the junction isolation implantation region, wherein the first isolation structures have a first depth less than a second depth of the second isolation structures, and further wherein a first thickness of the first liner is less than a second thickness of the second liner; wherein the substrate includes a front surface and a back surface, the first isolation structures and the second isolation structures extending from the front surface into the substrate towards the back surface; wherein the transistor is disposed at the front surface and the sensor element includes a light sensing region disposed in the substrate; a doped layer disposed on the back surface of the substrate, wherein the light sensing region extends from the front surface of the substrate to the doped layer; a color filter disposed over the back surface of the substrate, wherein the color filter is aligned with the light sensing region; and a lens disposed over the back surface of the substrate, wherein the lens is aligned with the light sensing region. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15)
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16. A device comprising:
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a substrate having a first portion associated with an image sensor and a second portion associated with a circuit element, wherein the first portion includes a first isolation structure including a first thermal oxide liner disposed on the substrate, wherein the second portion includes a second isolation structure including a second thermal oxide liner disposed on the substrate, wherein a portion of the substrate adjacent to the first isolation structure includes a plasma-doped junction isolation implantation region, and a portion of the substrate adjacent to the second isolation structure is free of the plasma-doped junction isolation implantation region, wherein the first thermal oxide liner and the second thermal oxide liner are formed by independent thermal oxidation processes, such that the first thermal oxide liner has a first thickness that is less than a second thickness of the second thermal oxide liner, wherein the first thickness is less than about 20 Angstroms, and wherein the second thickness is greater than or equal to about 100 Angstroms, wherein the first isolation structure and the second isolation structure each include a fill material disposed respectively on the first thermal oxide liner and the second thermal oxide liner, and wherein a depth of the first isolation structure is less than a depth of the second isolation structure. - View Dependent Claims (17, 18)
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Specification