MOSFET with integrated schottky diode
First Claim
1. A method for forming Schottky structure comprising:
- a) forming two trenches in a semiconductor material separated by a mesa;
b) lining sidewalls and a bottom surface of the trenches with a dielectric material;
c) disposing a conductive material in the trenches, wherein the disposed conductive material lines the dielectric material on the sidewalls and the bottom surface;
d) removing the conductive material on the bottom surface of the trenches, wherein a first portion of conductive material remains on a first sidewall of each trench, and wherein a second portion of conductive material remains on a second sidewall of each trench, and wherein the first and second portions of conductive material are electrically isolated from each other and are maintained at different electric potentials;
e) filling a space between the first and second portions of the conductive material with a trench filling insulator material; and
f) forming a Schottky contact between the outermost sidewalls of the two trenches.
1 Assignment
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Accused Products
Abstract
Schottky structure fabrication includes forming two trenches in a semiconductor material. The trenches are separated from each other by a mesa. Sidewalls and a bottom surface of the trenches are lined with a dielectric material. A conductive material is disposed in the trenches lining the dielectric material on the sidewalls and the bottom surface. The conductive material on the bottom surface of the trenches is removed so that a first portion of conductive material remains on a first sidewall of each trench, and a second portion of conductive material remains on a second sidewall of each trench. The first and second portions of conductive material are electrically isolated from each other. The space between the first and second portions of the conductive material is filled with a trench filling insulator material and a Schottky contact is formed between the outermost sidewalls of the two trenches.
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Citations
15 Claims
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1. A method for forming Schottky structure comprising:
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a) forming two trenches in a semiconductor material separated by a mesa; b) lining sidewalls and a bottom surface of the trenches with a dielectric material; c) disposing a conductive material in the trenches, wherein the disposed conductive material lines the dielectric material on the sidewalls and the bottom surface; d) removing the conductive material on the bottom surface of the trenches, wherein a first portion of conductive material remains on a first sidewall of each trench, and wherein a second portion of conductive material remains on a second sidewall of each trench, and wherein the first and second portions of conductive material are electrically isolated from each other and are maintained at different electric potentials; e) filling a space between the first and second portions of the conductive material with a trench filling insulator material; and f) forming a Schottky contact between the outermost sidewalls of the two trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification