Semiconductor device and manufacturing method thereof
First Claim
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1. A method for manufacturing a semiconductor device comprising steps of:
- forming a first insulating film;
forming an oxide semiconductor film over the first insulating film;
forming a second insulating film with a projection portion and a depression portion from the first insulating film and an oxide semiconductor layer on the projection portion from the oxide semiconductor film;
forming a third insulating film covering and in contact with the second insulating film and the oxide semiconductor layer;
forming a fourth insulating film covering the third insulating film and filling the depression portion, the fourth insulating film comprises a material that is different from the third insulating film;
performing planarization treatment on the fourth insulating film until part of the third insulating film overlapping with the oxide semiconductor layer is exposed;
removing the part of the third insulating film so that a top surface of the oxide semiconductor layer is exposed and a side surface of the oxide semiconductor layer is covered by the third insulating film and the fourth insulating film after performing the planarization treatment;
forming a gate insulating film over the oxide semiconductor layer after removing the part of the third insulating film;
forming a gate electrode over the gate insulating film;
adding dopant to the oxide semiconductor layer using the gate electrode as a mask; and
forming a sidewall insulating layer in contact with the gate electrode after adding the dopant to the oxide semiconductor layer.
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Abstract
A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.
202 Citations
24 Claims
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1. A method for manufacturing a semiconductor device comprising steps of:
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forming a first insulating film; forming an oxide semiconductor film over the first insulating film; forming a second insulating film with a projection portion and a depression portion from the first insulating film and an oxide semiconductor layer on the projection portion from the oxide semiconductor film; forming a third insulating film covering and in contact with the second insulating film and the oxide semiconductor layer; forming a fourth insulating film covering the third insulating film and filling the depression portion, the fourth insulating film comprises a material that is different from the third insulating film; performing planarization treatment on the fourth insulating film until part of the third insulating film overlapping with the oxide semiconductor layer is exposed; removing the part of the third insulating film so that a top surface of the oxide semiconductor layer is exposed and a side surface of the oxide semiconductor layer is covered by the third insulating film and the fourth insulating film after performing the planarization treatment; forming a gate insulating film over the oxide semiconductor layer after removing the part of the third insulating film; forming a gate electrode over the gate insulating film; adding dopant to the oxide semiconductor layer using the gate electrode as a mask; and forming a sidewall insulating layer in contact with the gate electrode after adding the dopant to the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 19, 20)
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7. A method for manufacturing a semiconductor device comprising steps of:
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forming a first insulating film; forming an oxide semiconductor film over the first insulating film; forming a second insulating film with a projection portion and a depression portion from the first insulating film and an oxide semiconductor layer on the projection portion from the oxide semiconductor film; forming a third insulating film covering and in contact with the second insulating film and the oxide semiconductor layer; forming a fourth insulating film covering the third insulating film and filling the depression portion, the fourth insulating film comprises a material that is different from the third insulating film; performing planarization treatment on the fourth insulating film until part of the third insulating film overlapping with the oxide semiconductor layer is exposed; removing the part of the third insulating film so that a top surface of the oxide semiconductor layer is exposed and a side surface of the oxide semiconductor layer is covered by the third insulating film and the fourth insulating film after performing the planarization treatment; forming a gate insulating film over the oxide semiconductor layer after removing the part of the third insulating film; forming a gate electrode over the gate insulating film; adding dopant to the oxide semiconductor layer using the gate electrode as a mask; forming a sidewall insulating layer in contact with the gate electrode after adding the dopant to the oxide semiconductor layer; forming an electrode comprising a first conductive layer in contact with the oxide semiconductor layer and the sidewall insulating layer and a second conductive layer on the first conductive layer, and wherein width of the first conductive layer is larger than width of the second conductive layer. - View Dependent Claims (8, 9, 10, 11, 12, 21, 22)
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13. A method for manufacturing a semiconductor device comprising steps of:
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forming a first insulating film; forming an oxide semiconductor film over the first insulating film; forming a second insulating film with a projection portion and a depression portion from the first insulating film and an oxide semiconductor layer on the projection portion from the oxide semiconductor film; forming a third insulating film covering and in contact with the second insulating film and the oxide semiconductor layer; forming a fourth insulating film covering the third insulating film and filling the depression portion, the fourth insulating film comprises a material that is different from the third insulating film; performing planarization treatment on the fourth insulating film and the third insulating film covering a top surface of the oxide semiconductor layer until the top surface of the oxide semiconductor layer is exposed; forming a gate insulating film over the oxide semiconductor layer after performing the planarization treatment; forming a gate electrode over the gate insulating film; adding dopant to the oxide semiconductor layer using the gate electrode as a mask; and forming a sidewall insulating layer in contact with the gate electrode after adding the dopant to the oxide semiconductor layer. - View Dependent Claims (14, 15, 16, 17, 18, 23, 24)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Isobe, Atsuo, Saito, Toshihiko, Hatano, Takehisa, Suzawa, Hideomi, Sasagawa, Shinya, Koezuka, Junichi, Sato, Yuichi, Ohno, Shinji
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Primary Examiner(s)GONDARENKO, NATALIA A
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Application NumberUS14/459,597Publication NumberTime in Patent Office1,412 DaysField of Search257 43, 257754-760, 257E29273, 257E29255, 257646, 438510-688, 438104, 438149, 438151, 438164, 438423, 438424, 438431, 438435, 438439-453, 438454US Class CurrentCPC Class CodesH01L 21/02488 Insulating materialsH01L 21/02565 Oxide semiconducting materi...H01L 27/1225 with semiconductor material...H01L 29/66969 of devices having semicondu...H01L 29/786 Thin film transistors, i.e....H01L 29/78606 with supplementary region o...H01L 29/7869 having a semiconductor body...
