Liquid crystal display device
First Claim
Patent Images
1. A display device comprising:
- a thin film transistor comprising;
a gate electrode layer;
a first insulating layer over the gate electrode layer;
a channel formation region containing an oxide semiconductor, the channel formation region being over the first insulating layer and overlapping with the gate electrode layer;
an n-type region including one of a source region and a drain region; and
a second insulating layer over the channel formation region;
a pixel electrode layer electrically connected to the thin film transistor;
a light-transmitting chromatic color resin layer between the thin film transistor and the pixel electrode layer;
a display layer over the thin film transistor, the pixel electrode layer, and the light-transmitting chromatic color resin layer; and
an electrode layer over the second insulating layer and overlapping with the gate electrode layer and the channel formation region,wherein the channel formation region is included in a semiconductor layer,wherein the n-type region includes crystals each having a diameter of 1 nm to 10 nm,wherein the light-transmitting chromatic color resin layer has a light transmittance lower than the semiconductor layer,wherein the light-transmitting chromatic color resin layer covers the channel formation region and the n-type region,wherein the gate electrode layer contains copper,wherein the first insulating layer is a stacked layer including a first layer and a second layer,wherein the first layer is a different layer from the second layer,wherein the first layer contains silicon and nitrogen,wherein the second layer contains silicon and oxygen,wherein the oxide semiconductor contains indium, gallium, and zinc,wherein the n-type region contains indium, gallium, zinc and oxygen,wherein the second insulating layer contains silicon and oxygen, andwherein a length of the gate electrode layer is larger than a length of the semiconductor layer in a direction parallel to a channel length direction of the thin film transistor.
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Abstract
To provide a liquid crystal display device suitable for a thin film transistor which uses an oxide semiconductor. In a liquid crystal display device which includes a thin film transistor including an oxide semiconductor layer, a film having a function of attenuating the intensity of transmitting visible light is used as an interlayer film which covers at least the oxide semiconductor layer. As the film having a function of attenuating the intensity of transmitting visible light, a coloring layer can be used and a light-transmitting chromatic color resin layer is preferably used. An interlayer film which includes a light-transmitting chromatic color resin layer and a light-blocking layer may be formed in order that the light-blocking layer is used as a film having a function of attenuating the intensity of transmitting visible light.
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Citations
28 Claims
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1. A display device comprising:
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a thin film transistor comprising; a gate electrode layer; a first insulating layer over the gate electrode layer; a channel formation region containing an oxide semiconductor, the channel formation region being over the first insulating layer and overlapping with the gate electrode layer; an n-type region including one of a source region and a drain region; and a second insulating layer over the channel formation region; a pixel electrode layer electrically connected to the thin film transistor; a light-transmitting chromatic color resin layer between the thin film transistor and the pixel electrode layer; a display layer over the thin film transistor, the pixel electrode layer, and the light-transmitting chromatic color resin layer; and an electrode layer over the second insulating layer and overlapping with the gate electrode layer and the channel formation region, wherein the channel formation region is included in a semiconductor layer, wherein the n-type region includes crystals each having a diameter of 1 nm to 10 nm, wherein the light-transmitting chromatic color resin layer has a light transmittance lower than the semiconductor layer, wherein the light-transmitting chromatic color resin layer covers the channel formation region and the n-type region, wherein the gate electrode layer contains copper, wherein the first insulating layer is a stacked layer including a first layer and a second layer, wherein the first layer is a different layer from the second layer, wherein the first layer contains silicon and nitrogen, wherein the second layer contains silicon and oxygen, wherein the oxide semiconductor contains indium, gallium, and zinc, wherein the n-type region contains indium, gallium, zinc and oxygen, wherein the second insulating layer contains silicon and oxygen, and wherein a length of the gate electrode layer is larger than a length of the semiconductor layer in a direction parallel to a channel length direction of the thin film transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A display device comprising:
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a thin film transistor comprising; a gate electrode layer; a first insulating layer over the gate electrode layer; a channel formation region, the channel formation region being over the first insulating layer and overlapping with the gate electrode layer; an n-type region including one of a source and a drain; a source electrode and a drain electrode over the channel formation region including an oxide semiconductor; and a second insulating layer over the channel formation region; a light-transmitting chromatic color resin layer over the second insulating layer; a third insulating layer over and in direct contact with the light-transmitting chromatic color resin layer; a pixel electrode layer electrically connected to one of the source electrode and the drain electrode of the thin film transistor; and an electrode layer over the second insulating layer and overlapping with the gate electrode layer and the channel formation region, wherein the channel formation region is included in a semiconductor layer, wherein the n-type region includes crystals each having a diameter of 1 nm to 10 nm, wherein the light-transmitting chromatic color resin layer has a light transmittance lower than the semiconductor layer, wherein the light-transmitting chromatic color resin layer covers the channel formation region and the n-type region, wherein the first insulating layer is a stacked layer including a first layer and a second layer, wherein the first layer is a different layer from the second layer, wherein the first layer contains silicon and nitrogen, wherein the second layer contains silicon and oxygen, wherein the oxide semiconductor contains indium, gallium, and zinc, wherein the n-type region contains indium, gallium, zinc and oxygen, wherein the second insulating layer contains silicon and oxygen, wherein the pixel electrode layer contains indium tin oxide, and wherein a length of the gate electrode layer is larger than a length of the semiconductor layer in a direction parallel to a channel length direction of the thin film transistor. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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22. A display device comprising:
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a thin film transistor comprising; a gate electrode layer; a first insulating layer over the gate electrode layer; a channel formation region containing an oxide semiconductor, the channel formation region being over the first insulating layer and overlapping with the gate electrode layer; an n-type region including one of a source region and a drain region; and a second insulating layer over the channel formation region; a pixel electrode layer electrically connected to the thin film transistor; a light-transmitting chromatic color resin layer between the thin film transistor and the pixel electrode layer; and an electrode layer over the second insulating layer and overlapping with the gate electrode layer and the channel formation region, wherein the channel formation region is included in a semiconductor layer, wherein the n-type region includes crystals each having a diameter of 1 nm to 10 nm, wherein the light-transmitting chromatic color resin layer has a light transmittance lower than the semiconductor layer, wherein the light-transmitting chromatic color resin layer covers the channel formation region and the n-type region, wherein the gate electrode layer contains copper, wherein the first insulating layer is a stacked layer including a first layer and a second layer, wherein the first layer is a different layer from the second layer, wherein the first layer contains silicon and nitrogen, wherein the second layer contains silicon and oxygen, wherein the oxide semiconductor contains indium, gallium, and zinc, wherein the n-type region contains indium, gallium, zinc and oxygen, wherein the second insulating layer contains silicon and oxygen, and wherein a length of the gate electrode layer is larger than a length of the semiconductor layer in a direction parallel to a channel length direction of the thin film transistor. - View Dependent Claims (23, 24, 25, 26, 27, 28)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsIshitani, Tetsuji, Kubota, Daisuke
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Primary Examiner(s)Briggs, Nathanael R
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Assistant Examiner(s)GROSS, ALEXANDER P
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Application NumberUS13/890,421Publication NumberTime in Patent Office1,874 DaysField of SearchUS Class CurrentCPC Class CodesG02F 1/133514 Colour filtersG02F 1/136209 Light shielding layers, e.g...G02F 1/136222 Colour filters incorporated...G02F 1/1368 in which the switching elem...H01L 27/1225 with semiconductor material...H01L 27/1248 with a particular compositi...H01L 29/78618 characterised by the drain ...H01L 29/7869 having a semiconductor body...
