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Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction

  • US 10,008,629 B2
  • Filed: 02/01/2016
  • Issued: 06/26/2018
  • Est. Priority Date: 10/04/2011
  • Status: Active Grant
First Claim
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1. A nitride-semiconductor light emitting device comprising:

  • a substrate;

    a first heterostructure;

    a second heterostructure;

    a light emitting region comprising;

    barrier layers comprising AlGaN; and

    one or more quantum wells comprising AlGaN, each quantum well respectively disposed between two of the barrier layers, the light emitting region disposed between the first and second heterostructures and configured to emit light having a central wavelength, λ

    , and a degree of polarization, PD, where PD>

    0.006λ



    b for 200 nm≤

    λ



    400 nm, wherein b≤

    1.5, wherein the first heterostructure is disposed between the light emitting region and the substrate and includes a transition layer comprising a two section AlN/GaN superlattice, the two section AlN/GaN superlattice having a first surface near the substrate and a second surface near the light emitting region, the two section superlattice configured to transition Al content of the device from a higher Al content near the first surface to a lower Al content near the second surface.

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