Method for manufacturing semiconductor device using high speed epitaxial lift-off and template for III-V direct growth and semiconductor device manufactured using the same
First Claim
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1. A method for manufacturing a semiconductor device, comprising:
- providing a template having a first substrate and a patterned first III-V group compound layer disposed on the first substrate, wherein the providing of the template includes forming the patterned first III-V group compound layer by patterning the first III-V group compound layer on a first sacrificial layer;
forming an etch stop layer, apportioned according to a shape of the patterned first III-V group compound layer without additional patterning process, on the patterned first III-V group compound layer by epitaxial growth;
forming a second sacrificial layer on the etch stop layer by the epitaxial growth;
forming a second III-V group compound layer on the second sacrificial layer by the epitaxial growth;
bonding a second substrate made of silicon onto the second III-V group compound layer; and
separating the second III-V group compound layer and the second substrate from the template by removing the second sacrificial layer.
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Abstract
Disclosed is a method for manufacturing a semiconductor device, which includes providing a template having a first substrate and a patterned first III-V group compound layer located on the first substrate, forming a sacrificial layer on the patterned first III-V group compound layer by epitaxial growth, forming a second III-V group compound layer on the sacrificial layer by epitaxial growth, bonding a second substrate made of silicon onto the second III-V group compound layer, and separating the second III-V group compound layer and the second substrate from the template by removing the sacrificial layer.
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Citations
13 Claims
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1. A method for manufacturing a semiconductor device, comprising:
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providing a template having a first substrate and a patterned first III-V group compound layer disposed on the first substrate, wherein the providing of the template includes forming the patterned first III-V group compound layer by patterning the first III-V group compound layer on a first sacrificial layer; forming an etch stop layer, apportioned according to a shape of the patterned first III-V group compound layer without additional patterning process, on the patterned first III-V group compound layer by epitaxial growth; forming a second sacrificial layer on the etch stop layer by the epitaxial growth; forming a second III-V group compound layer on the second sacrificial layer by the epitaxial growth; bonding a second substrate made of silicon onto the second III-V group compound layer; and separating the second III-V group compound layer and the second substrate from the template by removing the second sacrificial layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for manufacturing a semiconductor device, comprising:
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providing a template having a first substrate and a patterned first III-V group compound layer disposed on the first substrate; forming an etch stop layer, apportioned according to a shape of the patterned first III-V group compound layer without additional patterning process, on the patterned first III-V group compound layer by epitaxial growth; forming a sacrificial layer on the etch stop layer by the epitaxial growth; forming a second III-V group compound layer on the sacrificial layer by the epitaxial growth; bonding a second substrate made of silicon onto the second III-V group compound layer; and separating the second III-V group compound layer and the second substrate from the template by removing the sacrificial layer, wherein the etch stop layer is not dissolved during an etching process using an etching solution in the removing of the sacrificial layer.
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Specification