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Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges

  • US 10,014,365 B2
  • Filed: 07/29/2014
  • Issued: 07/03/2018
  • Est. Priority Date: 04/13/2009
  • Status: Active Grant
First Claim
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1. A method for fabricating a power device, comprising the steps of:

  • etching one or more trenches vertically into a semiconductor mass;

    forming a thin dielectric layer on sidewalls of said trenches;

    introducing permanent electrostatic charge into said thin dielectric layer;

    anisotropically etching through the bottoms of said trenches into said semiconductor mass; and

    at least partially filling said trenches with a semiconductor material which is electrically connected to said semiconductor mass at the bottoms of said trenches.

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