Semiconductor device has an oxide semiconductor layer containing a C-axis aligned crystal
First Claim
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1. A semiconductor device comprising:
- a first conductive layer;
a first insulating layer over the first conductive layer;
an oxide semiconductor layer including In, Ga, and Zn over the first insulating layer;
a second conductive layer electrically connected to the oxide semiconductor layer;
a third conductive layer electrically connected to the oxide semiconductor layer; and
a second insulating layer over each of the second conductive layer and the third conductive layer,wherein the oxide semiconductor layer comprises a channel formation region,wherein the oxide semiconductor layer comprises a first region and a second region below the first region,wherein the first region comprises a crystal region containing a c-axis aligned crystal,wherein the second region has lower crystallinity than the crystal region,wherein the first region comprises a region in contact with the second insulating layer, andwherein the second region comprises a region in contact with the first insulating layer.
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Abstract
A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer over the gate insulating layer in a region overlapping with the crystalline region. The crystalline region includes a crystal whose c-axis is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer.
172 Citations
12 Claims
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1. A semiconductor device comprising:
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a first conductive layer; a first insulating layer over the first conductive layer; an oxide semiconductor layer including In, Ga, and Zn over the first insulating layer; a second conductive layer electrically connected to the oxide semiconductor layer; a third conductive layer electrically connected to the oxide semiconductor layer; and a second insulating layer over each of the second conductive layer and the third conductive layer, wherein the oxide semiconductor layer comprises a channel formation region, wherein the oxide semiconductor layer comprises a first region and a second region below the first region, wherein the first region comprises a crystal region containing a c-axis aligned crystal, wherein the second region has lower crystallinity than the crystal region, wherein the first region comprises a region in contact with the second insulating layer, and wherein the second region comprises a region in contact with the first insulating layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a first conductive layer; a first insulating layer over the first conductive layer; an oxide semiconductor layer including In, Ga, and Zn over the first insulating layer; a second conductive layer electrically connected to the oxide semiconductor layer; a third conductive layer electrically connected to the oxide semiconductor layer; and a second insulating layer over each of the second conductive layer and the third conductive layer, wherein the oxide semiconductor layer comprises a channel formation region, wherein the oxide semiconductor layer comprises a first region and a second region below the first region, wherein the first region comprises a crystal region containing a c-axis aligned crystal, wherein the second region has lower crystallinity than the crystal region, wherein the first region comprises a region in contact with the second insulating layer, wherein the second region comprises a region in contact with the first insulating layer, and wherein the second conductive layer has a region in contact with the second region. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification