High efficiency photovoltaic cells with self concentrating effect

• US 10,014,421 B2
• Filed: 03/17/2014
• Issued: 07/03/2018
• Est. Priority Date: 09/26/2006
• Status: Active Grant

• Current Assignee: Banpil Photonics, Inc.
• Original Assignee: Banpil Photonics, Inc.
• Inventors: Dutta, Achyut Kumar
• Primary Examiner(s): Pillay, Devina
• Application Number:
  US14/217,227
• Publication Number:
  US 20140196784A1
• Time in Patent Office: 1,569 Days
• CPC Class Codes: H01L 31/0236 Special surface textures
• CPC Class Codes: H01L 31/0296 including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: H01L 31/03529 Shape of the potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/0547 comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
• CPC Class Codes: Y02E 10/52 PV systems with concentrators

Abstract

Novel structures of photonics devices (e.g. photovoltaic cells also called as solar cells) are provided. The Cells are based on the micro (or nano) structures which could not only increase the surface area but also have the capability of self-concentrating the light incident onto the photonics devices. Using of such structures, it is possible to achieve significant performance improvement. For example, if such structures are used in the photovoltaic cells, large power generation capability per unit physical area is possible over the conventional cells, and have enormous applications such as in space, in commercial, residential and industrial applications. Such structures are also beneficial to other photonics devices such as photodetector to enhance the performance.

Claims

1. A photovoltaic cell comprising:

a substrate having a top surface;

wherein said top surface of the substrate has a three-dimensional geometric pattern etched from the substrate, said substrate being a single piece of material;

wherein the three-dimensional geometric pattern comprising,

an array of pyramidal, conical, truncated pyramidal, or truncated conical shaped nano-scaled or micrometer-scaled protruding structures separated by gaps,

wherein each protruding structure has tilted sides, a base, an internal angle alpha between the tilted sides and the base, and a height,

wherein the gaps separate the bases of the protruding structures,

wherein the bases of the protruding structures are oriented such that the bases of the protruding structures are coplanar or parallel,

wherein the internal angle alpha of each protruding structure is between 45 and 90 degrees, thereby concentrating some light incident on the tilted sides of each protruding structure onto the gaps between the protruding structures, and

wherein the height of each protruding structure, the internal angle alpha of each protruding structure, and the gaps between the protruding structures are oriented to reflect some light incident on the tilted sides of each protruding structure back and forth between the tilted sides of adjacent protruding structures;

an electrode, wherein the electrode completely overlays said three-dimensional geometric pattern etched from the substrate; and

a pn junction, wherein the pn junction overlays the electrode.

2. The photovoltaic cell of claim 1, further comprising a radiation tolerant layer.

3. The photovoltaic cell of claim 1, wherein the pn junction is electrically connected to the electrode.

4. The photovoltaic cell of claim 1 wherein the electrode provides a three-dimensional geometric pattern that follows the contour of the three dimensional geometric pattern of the top surface of the substrate.

5. A photovoltaic cell comprising:

a substrate formed from a semiconductor material;

wherein a three-dimensional geometric pattern etched from the substrate, has a top surface and wherein said substrate being a single piece of material;

a first electrode, wherein the first electrode completely overlays said three-dimensional geometric pattern etched from the substrate;

wherein a top surface of the first electrode provides a three dimensional geometric pattern that follows the contour of the three dimensional pattern etched from the substrate,

a first electrical material of p- or n-type, overlying the first electrode;

a second electrical material of type opposite to that of the first electrical material, completely overlying the first electrical material thereby providing a p-n junction along the interface between the first electrical material and the second electrical material;

wherein a top surface of the first electrical material provides a three dimensional geometric pattern that follows the contour of the three dimensional geometric pattern of the top surface of the first electrode,

and a second electrode, overlying the second electrical material,

wherein the three-dimensional geometric pattern etched from the substrate comprising,

an array of pyramidal, conical, truncated pyramidal, or truncated conical shaped nano-scaled or micrometer-scaled protruding structures separated by gaps,

wherein each protruding structure has tilted sides, a base, an internal angle alpha between the tilted sides and the base, and a height,

wherein the gaps separate the bases of the protruding structures,

wherein the bases of the protruding structures are oriented such that the bases of the protruding structures are coplanar or parallel,

wherein the internal angle alpha of each protruding structure is between 45 and 90 degrees, thereby concentrating some light incident on the tilted sides of each protruding structure onto the gaps between the protruding structures, and

wherein the height of each protruding structure, the internal angle alpha of each protruding structure, and the gaps between the protruding structures are oriented to reflect some light incident on the tilted sides of each protruding structure back and forth between the tilted sides of adjacent protruding structures.

6. The photovoltaic cell of claim 5, further comprising a passivation material that overlays the second electrode and forms a level surface.

7. The photovoltaic cell of claim 5, further comprising a radiation tolerant layer.

8. The photovoltaic cell of claim 5, wherein said first electric material and said second electrical material are selected from the group consisting of Si, CdTe, GaAs, InP, Ge, ZnO, SiGe, GaSb, CdZnTe, InSb, HgCdTe, and GaN.

9. The photovoltaic cell of claim 5, wherein the second electrical material provides a three dimensional geometric pattern that follows the contour of the three dimensional geometric pattern of the top surface of said first electrical material.

10. The photovoltaic cell of claim 5, wherein the second electrode forms a level surface.

11. The photovoltaic cell of claim 5, wherein the second electrical material forms a level surface.

12. The photovoltaic cell of claim 5 wherein the pn junction comprises multiple pn junctions.

13. A photovoltaic cell comprising:

a substrate;

wherein a three-dimensional geometric pattern etched from the substrate, has a top surface and wherein said substrate being a single piece of material;

a first electrode, wherein the first electrode completely overlays said three-dimensional geometric pattern etched from the substrate;

wherein a top surface of the first electrode provides a three dimensional geometric pattern that follows the contour of the three dimensional pattern etched from the substrate,

a first electrical material of p- or n-type, overlying the first electrode;

wherein a top surface of the first electrical material provides a three dimensional geometric pattern that follows the contour of the three dimensional geometric pattern of the top surface of said first electrode,

a second electrical material of type opposite to that of the first electrical material, completely overlying the first electrical material thereby providing a p-n junction along the interface between the first electrical material and the second electrical material;

wherein a top surface of the second electrical material provides a three dimensional geometric pattern that follows the contour of the three dimensional geometric pattern of the top surface of said first electrical material,

a passivation material that fills in between the three-dimensional geometric pattern of the top surface of the second electrical material and forms a level surface;

a third electrical material disposed on the passivation material is electrically connected to the second electrical material;

a second electrode overlying the third electrical material wherein the second electrode is electrically connected to the third electrical material;

wherein the three-dimensional geometric pattern etched from the substrate comprising,

an array of pyramidal, conical, truncated pyramidal, or truncated conical shaped nano-scaled or micrometer-scaled protruding structures separated by gaps,

wherein each protruding structure has tilted sides, a base, an internal angle alpha between the tilted sides and the base, and a height,

wherein the gaps separate the bases of the protruding structures,

wherein the bases of the protruding structures are oriented such that the bases of the protruding structures are coplanar or parallel,

wherein the internal angle alpha of each protruding structure is between 45 and 90 degrees, thereby concentrating some light incident on the tilted sides of each protruding structure onto the gaps between the protruding structures, and

wherein the height of each protruding structure, the internal angle alpha of each protruding structure, and the gaps between the protruding structures are oriented to reflect some light incident on the tilted sides of each protruding structure back and forth between the tilted sides of adjacent protruding structures.

14. The photovoltaic cell of claim 13 wherein the third electrical material is of type opposite to the second electrical material.

15. The photovoltaic cell of claim 13, further comprising a radiation tolerant layer.

16. The photovoltaic cell of claim 13, wherein said first electric material is selected from the group consisting of Si, CdTe, GaAs, InP, Ge, ZnO, Si:

Ge, GaSb, CdZnTe, InSb, HgCdTe, and GaN.

17. The photovoltaic cell of claim 13, wherein the first and second electrical material is electrically connected to either the first or second electrode.

18. The photovoltaic cell of claim 13 wherein the third electrical material creates a junction that extends the range of solar spectrum absorption or to prevent the photovoltaic cell from the radiation exposure.

19. The photovoltaic cell of claim 13, wherein the pn junction comprises multiple pn junctions.