Light-emitting device

• US 10,014,441 B2
• Filed: 12/22/2014
• Issued: 07/03/2018
• Est. Priority Date: 03/30/2012
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Chen, Shih-I, Chen, Wei-Yu, Chen, Yi-Ming, Lin, Ching-Pei, Lee, Tsung-Xian
• Primary Examiner(s): Kim, Su C
• Application Number:
  US14/579,807
• Publication Number:
  US 20150155444A1
• Time in Patent Office: 1,289 Days
• Field of Search: 257 9- 39, 257 79-103, 257915, 257E51018-E51022, 257E33001-E33077, 257E33054, 257E25028, 257E25032, 257E39, 257E51038-E5104, 257E23074, 257E23165, 257E29069-E29071, 257E29245, 257E49001-E49004, 438 22- 47, 438 69, 438493, 438503, 438507, 438775-777, 438956, 438962
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

Claims

1. A light-emitting device, comprising:

a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction;

a first electrode coupled to the first conductivity type semiconductor layer and having a first surface parallel to the stacking direction;

a second electrode coupled to the second conductivity type semiconductor layer and having a second surface parallel to the stacking direction, wherein the first surface and the second surface are substantially coplanar on a plane, and the plane is substantially parallel to the stacking direction;

a dielectric layer disposed between the first electrode and the second electrode;

a conductive layer under the first conductivity type semiconductor layer and having a width greater than the width of the first conductivity type semiconductor layer, wherein the conductive layer comprises a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first conductivity type semiconductor layer; and

a transparent conductive layer over the second conductivity type semiconductor layer and having a width greater than the width of the light-emitting stack, wherein the transparent conductive layer comprises a second overlapping portion which overlaps the second conductivity type semiconductor layer and a second extending portion which does not overlap the second conductivity type semiconductor layer.

2. The light-emitting device as claimed in claim 1, wherein the first extending portion and the second extending portion extend in a first direction parallel to the width direction of the light-emitting stack.

3. The light-emitting device as claimed in claim 2, wherein the first electrode is disposed directly under the first extending portion, and the second electrode is disposed directly over the second extending portion.

4. The light-emitting device as claimed in claim 3, wherein the first electrode is perpendicular to the first extending portion, and the second electrode is perpendicular to the second extending portion.

5. The light-emitting device as claimed in claim 1, wherein the conductive layer further comprises a third extending portion, the transparent conductive layer further comprises a fourth extending portion, and the third extending portion and the fourth extending portion extend in a second direction parallel to the width direction of the light-emitting stack.

6. The light-emitting device as claimed in claim 4, further comprising a first transparent layer disposed under the conductive layer and joining the first electrode, and a second transparent layer disposed over the transparent conductive layer and joining the second electrode.

7. The light-emitting device as claimed in claim 6, wherein the first transparent layer, the second transparent layer, or both comprise glass.

8. The light-emitting device as claimed in claim 1, wherein the transparent conductive layer comprises metal oxide or a thin metal having a thickness less than 500 Å

.

9. The light-emitting device as claimed in claim 8, wherein the metal oxide comprises one material selected from the group consisting of indium tin oxide (ITO), aluminum zinc oxide (AZO), cadmium tin oxide, antimony tin oxide, zinc oxide (ZnO), indium zinc oxide (IZO), and zinc tin oxide (ZTO).

10. The light-emitting device as claimed in claim 8, wherein a thickness of the metal oxide is substantially not larger than 120 nm.