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Optoelectronic semiconductor chip

  • US 10,014,444 B2
  • Filed: 06/25/2014
  • Issued: 07/03/2018
  • Est. Priority Date: 07/16/2013
  • Status: Active Grant
First Claim
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1. An optoelectronic semiconductor chip comprising:

  • a semiconductor body, which comprises an n-conductive region, an active region configured to generate electromagnetic radiation and a p-conductive region, wherein the n-conductive region is arranged on a side of the active region remote from the p-conductive region;

    a first mirror layer arranged on a bottom of the p-conductive region to reflect the electromagnetic radiation, wherein the active region is arranged on a side of the p-conductive region remote from the first mirror layer;

    a first encapsulation layer comprising electrically insulating material;

    a second encapsulation layer comprising electrically insulating material; and

    a third encapsulation layer comprising electrically insulating material,wherein the first, second and third encapsulation layers cover the semiconductor body in places on an outer face of the semiconductor body,wherein the third encapsulation layer completely covers the first mirror layer on a side remote from the p-conductive region and, in places, is in direct contact with the first mirror layer,wherein the second encapsulation layer and the third encapsulation layer are in places in direct contact with one another in a region spaced from the first mirror layer in a lateral direction,wherein the first encapsulation layer is arranged between the p-conductive region and the second encapsulation layer in the lateral direction,wherein the lateral direction is a direction extending parallel to a main plane of the first mirror layer, andwherein the second encapsulation layer is arranged between the first encapsulation layer and the third encapsulation layer in the lateral direction.

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