Optoelectronic semiconductor chip

• US 10,014,444 B2
• Filed: 06/25/2014
• Issued: 07/03/2018
• Est. Priority Date: 07/16/2013
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Engl, Karl, Hartung, Georg, Eibl, Johann, Huber, Michael, Maute, Markus
• Primary Examiner(s): Kim, Jay C
• Application Number:
  US14/905,763
• Publication Number:
  US 20160172545A1
• Time in Patent Office: 1,469 Days
• Field of Search: 257 98
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.

Claims

1. An optoelectronic semiconductor chip comprising:

a semiconductor body, which comprises an n-conductive region, an active region configured to generate electromagnetic radiation and a p-conductive region, wherein the n-conductive region is arranged on a side of the active region remote from the p-conductive region;

a first mirror layer arranged on a bottom of the p-conductive region to reflect the electromagnetic radiation, wherein the active region is arranged on a side of the p-conductive region remote from the first mirror layer;

a first encapsulation layer comprising electrically insulating material;

a second encapsulation layer comprising electrically insulating material; and

a third encapsulation layer comprising electrically insulating material,

wherein the first, second and third encapsulation layers cover the semiconductor body in places on an outer face of the semiconductor body,

wherein the third encapsulation layer completely covers the first mirror layer on a side remote from the p-conductive region and, in places, is in direct contact with the first mirror layer,

wherein the second encapsulation layer and the third encapsulation layer are in places in direct contact with one another in a region spaced from the first mirror layer in a lateral direction,

wherein the first encapsulation layer is arranged between the p-conductive region and the second encapsulation layer in the lateral direction,

wherein the lateral direction is a direction extending parallel to a main plane of the first mirror layer, and

wherein the second encapsulation layer is arranged between the first encapsulation layer and the third encapsulation layer in the lateral direction.

2. The optoelectronic semiconductor chip according to claim 1, further comprising a second mirror layer arranged on a bottom of the third encapsulation layer remote from the semiconductor body, and wherein the second mirror layer projects in the lateral direction beyond the outer face of the semiconductor body.

3. The optoelectronic semiconductor chip according to claim 1, wherein the first encapsulation layer on the outer face of the semiconductor body extends from the active region along the p-conductive region to a side face of the first mirror layer, and wherein the first encapsulation layer is in direct contact with the first mirror layer.

4. The optoelectronic semiconductor chip according to claim 1, further comprising a fourth encapsulation layer completely covering the third encapsulation layer on a side remote from the semiconductor body and in direct contact with the third encapsulation layer in places.

5. The optoelectronic semiconductor chip according to claim 4, further comprising a second mirror layer arranged on an n-contact material remote from the n-conductive region, and wherein the third encapsulation layer and the fourth encapsulation layer are arranged, in places, between the first mirror layer and the second mirror layer.

6. The optoelectronic semiconductor chip according to claim 5, wherein the second mirror layer projects in the lateral direction beyond the outer face of the semiconductor body.

7. The optoelectronic semiconductor chip according to claim 5, wherein the second mirror layer extends beneath a contact region in places, wherein the second mirror layer is electrically insulated from the contact region at least by the third encapsulation layer, and wherein the contact region is provided for p-side connection of the semiconductor chip from outside the semiconductor chip.

8. The optoelectronic semiconductor chip according to claim 4, further comprising a fifth encapsulation layer, wherein the fifth encapsulation layer completely covers the outer face of the semiconductor body at the n-conductive region facing away from the active region, and wherein the fifth encapsulation layer is in direct contact with the second encapsulation layer in places to a side of the semiconductor body.

9. The optoelectronic semiconductor chip according to claim 8, wherein the second encapsulation layer is thinner in a region in contact with the fifth encapsulation layer than in a region in which there is no contact between the second encapsulation layer and the fifth encapsulation layer.

10. The optoelectronic semiconductor chip according to claim 8, further comprising a through-via that extends through the p-conductive region and the active region into the n-conductive region,

wherein the through-via comprises an n-contact material, by way of which the n-conductive region is electrically contacted, and

wherein, apart from the through-via, the semiconductor body is completely surrounded by the second encapsulation layer, the third encapsulation layer and the fifth encapsulation layer.

11. The optoelectronic semiconductor chip according to claim 10, wherein the first, second and third encapsulation layers directly adjoin the n-contact material in places.

12. The optoelectronic semiconductor chip according to claim 1, further comprising a through-via extending through the p-conductive region and the active region into the n-conductive region, wherein the through-via comprises an n-contact material, by way of which the n-conductive region is electrically contacted.

13. The optoelectronic semiconductor chip according to claim 12, further comprising:

a fourth encapsulation layer completely covering the third encapsulation layer on a side remote from the semiconductor body, wherein the fourth encapsulation layer is in direct contact with the third encapsulation layer in places; and

a fifth encapsulation layer, wherein the fifth encapsulation layer completely covers the outer face of the semiconductor body at the n-conductive region facing away from the active region, and wherein the fifth encapsulation layer is in direct contact with the second encapsulation layer in places to a side of the semiconductor body,

wherein apart from the through-via, the semiconductor body is completely surrounded by the second encapsulation layer, the third encapsulation layer and the fifth encapsulation layer, and

wherein the first, second, third and fourth encapsulation layers directly adjoin the n-contact material in places.

14. The optoelectronic semiconductor chip according to claim 1, wherein a distance between a side face of the first mirror layer and a side face of the n-conductive region in the lateral direction is at most 2.5 μ

m.

15. The optoelectronic semiconductor chip according to claim 1, wherein the p-conductive region and the first mirror layer are covered at their side faces in places by a metallic encapsulation layer, wherein an encapsulation layer sequence extends between the metallic encapsulation layer and the side faces of the p-conductive region and the first mirror layer.

16. The optoelectronic semiconductor chip according to claim 15, wherein the encapsulation layer sequence is formed by the first encapsulation layer and the second encapsulation layer.

17. The optoelectronic semiconductor chip according to claim 1, wherein the first, second and third encapsulation layers differ from one another with respect to their material composition.

18. An optoelectronic semiconductor chip comprising:

a semiconductor body, which comprises an n-conductive region, an active region provided to generate electromagnetic radiation and a p-conductive region, wherein the n-conductive region is arranged on a side of the active region remote from the p-conductive region;

a first mirror layer provided to reflect electromagnetic radiation, the first mirror layer being arranged on a bottom of the p-conductive region, wherein the active region is arranged on a side of the p-conductive region remote from the first mirror layer;

a second mirror layer provided to reflect electromagnetic radiation, wherein the second mirror layer projects in a lateral direction beyond an outer face of the semiconductor body;

a first encapsulation layer comprising an electrically insulating material and covering the semiconductor body in places on the outer face of the semiconductor body;

a second encapsulation layer comprising electrically insulating material and covering the semiconductor body in places on the outer face of the semiconductor body, wherein the second mirror layer is arranged on the first and second encapsulation layer remote from the semiconductor body; and

a third encapsulation layer comprising an electrically insulating material, wherein the second encapsulation layer and the third encapsulation layer are in places in direct contact with one another in a region to a side of the first mirror layer, wherein the first, second and third encapsulation layers cover the semiconductor body in places on the outer face thereof, and wherein the third encapsulation layer completely covers the first mirror layer on the side thereof remote from the p-conductive region and in places is in direct contact with the first mirror layer;

wherein the first encapsulation layer is arranged between the p-conductive region and the second encapsulation layer in a lateral direction, and

wherein the lateral direction is a direction extending parallel to a main plane of the first mirror layer.

19. The optoelectronic semiconductor chip according to claim 18, wherein the first and second encapsulation layers differ from one another with respect to their material composition.