Multilayer electronic structures with embedded filters

• US 10,014,843 B2
• Filed: 08/08/2013
• Issued: 07/03/2018
• Est. Priority Date: 08/08/2013
• Status: Active Grant

• Current Assignee: Zhuhai Access Semiconductor Company Limited
• Original Assignee: Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd.
• Inventors: Hurwitz, Dror, Huang, Alex
• Primary Examiner(s): Hiltunen, Thomas J
• Application Number:
  US13/962,316
• Publication Number:
  US 20150042415A1
• Time in Patent Office: 1,790 Days
• CPC Class Codes: H01L 27/016 Thin-film circuits
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H03H 2001/0085 Multilayer, e.g. LTCC, HTCC, green sheets
• CPC Class Codes: H03H 3/00 Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
• CPC Class Codes: H03H 7/0115 comprising only inductors and capacitors H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence
• CPC Class Codes: H03H 7/0138 Electrical filters or coupling circuits

Abstract

A composite electronic structure comprising at least one feature layer and at least one adjacent via layer, said layers extending in an X-Y plane and having height z, wherein the structure comprises at least one capacitor coupled in series or parallel to at least one inductor to provide at least one filter;

the at least one capacitor being sandwiched between the at least one feature layer and at least one via in said at least adjacent via layer, such that the at least one via stands on the at least one capacitor, and the at least one of the first feature layer and the adjacent via layer includes at least one inductor extending in the XY plane.

Claims

1. A composite electronic structure for coupling an IC Chip to a substrate, the composite electronic structure comprising:

at least one metal feature layer and at least one adjacent metal via layer, said layers embedded in a dielectric comprising a polymer matrix and extending in an X-Y plane and having height z,

wherein the composite electronic structure further comprises;

at least one capacitor coupled with at least one inductor, the at least one capacitor comprising;

a selected feature layer forming a lower electrode; and

a ceramic dielectric layer, the at least one capacitor disposed at a base of a via post in one of said at least one via layers such that the ceramic dielectric layer is sandwiched between the selected feature layer and the via post, such that the via post stands on the ceramic dielectric layer, and forms an upper electrode,

and

wherein the at least one inductor is formed in at least one of the at least one feature layer and the adjacent via layer.

2. The composite electronic structure of claim 1, wherein the at least one capacitor and the at least one inductor are coupled in series.

3. The composite electronic structure of claim 1, comprising at least a second feature layer over the via layer and wherein the at least one capacitor and the at least one inductor are coupled in parallel via the feature layer.

4. The composite electronic structure of claim 1, wherein the at least one inductor is fabricated in the feature layer.

5. The multilayer composite electronic structure of claim 4, wherein the at least one inductor is spirally coiled.

6. The multilayer composite electronic structure of claim 4 wherein the inductance of the inductor is at least 0.1 nH.

7. The multilayer composite electronic structure of claim 4 wherein the inductance of the inductor is less than 50 nH.

8. The multilayer composite electronic structure of claim 4, wherein a further inductor is fabricated in a via layer.

9. The multilayer composite electronic structure of claim 1, wherein the at least one inductor is fabricated in a via layer.

10. The multilayer composite electronic structure of claim 9 wherein the inductance of the inductor is at least 0.1 nH.

11. The multilayer composite electronic structure of claim 9 wherein the inductance of the inductor is less than 10 nH.

12. The multilayer composite electronic structure of claim 1, wherein said at least one inductor and said at least one capacitor provide a filter, said filter being selected from the group consisting of basic LC low pass filters, LC high pass filters, LC series band pass filters, LC parallel band pass filters and Low Pass Parallel—

Chebyshev filters.

13. The multilayer composite electronic structure of claim 1, wherein the polymer matrix further comprises glass fibers.

14. The multilayer composite electronic structure of claim 1, wherein the polymer matrix comprises a polymer selected from the group comprising polyimides, epoxies, BT (Bismaleimide/Triazine) and their blends.

15. The multilayer composite electronic structure of claim 1, wherein the polymer matrix further comprises inorganic particulate fillers having mean particle size of between 0.5 microns and 30 microns and between 15% and 30% of particulate by weight.

16. The multilayer composite electronic structure of claim 1, wherein the dielectric of the capacitor comprises at least one of the group consisting of Ta₂O5, TiO₂ and BaO₄SrTi and optionally further comprising Al₂O₃.

17. The multilayer composite electronic structure of claim 1, wherein the lower electrode comprising a noble metal.

18. The multilayer composite electronic structure of claim 17, wherein the lower electrode comprises a metal selected from the group consisting of gold, platinum and tantalum.

19. The multilayer composite electronic structure of claim 17, wherein the upper electrode comprises a metal selected from the group consisting of gold, platinum and tantalum.

20. The multilayer composite electronic structure of claim 17, wherein the upper electrode comprises the via post.

21. The multilayer composite electronic structure of claim 1 wherein the capacitor has a cross sectional area defined by a cross sectional area of the via post, that is carefully controlled to tune capacitance of capacitor.

22. The multilayer composite electronic structure of claim 1, wherein the at least one capacitor has a capacitance of between 1.5 pF and 300 pF.

23. The multilayer composite electronic structure of claim 1, wherein the at least one capacitor has a capacitance of between 5 and 15 pF.

24. A method of fabricating filters in an array, comprising fabricating capacitors by depositing a first electrode and a layer of ceramic and applying a via post over part of the layer of ceramic such that size of footprint of the via post on the layer of ceramic defines controls capacitance of the capacitor, and

fabricating inductors by electroplating copper into a pattern of photoresist, stripping away the photoresist and laminating.