High rate deposition systems and processes for forming hermetic barrier layers
First Claim
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1. A method of forming a hermetic barrier layer comprising:
- providing a substrate and a sputtering target within a sputtering chamber, the sputtering target including a thermally conductive backing plate and a sputtering material selected from at least one of a low Tg glass comprising tin oxide and having a glass transition temperature of less than about 400°
C. or a precursor of the low Tg glass;
maintaining the substrate at less than 200°
C. during sputtering, wherein maintaining the substrate at less than 200°
C. further comprises cooling the substrate to a temperature less than room temperature; and
forming a self-passivating barrier layer comprising the sputtering material over a surface of the substrate at a deposition rate of about 10 Å
/sec or greater by actively cooling the sputtering target at less than about 200°
C. while maintaining an internal pressure within the sputtering chamber to less than about 1×
10−
3 Torr and sweeping the sputtering target with an ion beam at near normal incidence,wherein the self-passivating barrier layer has a defect size distribution and defect density distribution less than a critical self-passivation threshold such that defect diffusion paths are sealed through molar volume expansion of less than 10% of the sputtering material when exposed to air.
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Abstract
A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.
48 Citations
10 Claims
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1. A method of forming a hermetic barrier layer comprising:
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providing a substrate and a sputtering target within a sputtering chamber, the sputtering target including a thermally conductive backing plate and a sputtering material selected from at least one of a low Tg glass comprising tin oxide and having a glass transition temperature of less than about 400°
C. or a precursor of the low Tg glass;maintaining the substrate at less than 200°
C. during sputtering, wherein maintaining the substrate at less than 200°
C. further comprises cooling the substrate to a temperature less than room temperature; andforming a self-passivating barrier layer comprising the sputtering material over a surface of the substrate at a deposition rate of about 10 Å
/sec or greater by actively cooling the sputtering target at less than about 200°
C. while maintaining an internal pressure within the sputtering chamber to less than about 1×
10−
3 Torr and sweeping the sputtering target with an ion beam at near normal incidence,wherein the self-passivating barrier layer has a defect size distribution and defect density distribution less than a critical self-passivation threshold such that defect diffusion paths are sealed through molar volume expansion of less than 10% of the sputtering material when exposed to air. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Current AssigneeCorning Incorporated
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Original AssigneeCorning Incorporated
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InventorsBellman, Robert Alan, Chuang, Ta-Ko, Manley, Robert George, Quesada, Mark Alejandro, Sachenik, Paul Arthur
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Primary Examiner(s)Wanga, Timon
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Application NumberUS13/840,752Publication NumberTime in Patent Office1,943 DaysField of SearchUS Class CurrentCPC Class CodesC23C 14/10 Glass or silicaC23C 14/34 SputteringC23C 14/35 by application of a magneti...C23C 14/541 Heating or cooling of the s...
