Systems and methods for sub-zero threshold characterization in a memory cell
First Claim
1. A memory system, comprising:
- a memory cell characterization circuit operable to;
program a first cell of a solid state memory device to a first voltage;
program a second cell of the solid state memory device to a second voltage different than the first voltage;
detect a voltage shift in the first cell when the second cell is being programmed;
repeatedly read a shifted voltage value of the first cell;
compare the shifted voltage value to a first set of incrementally adjusted voltage values, in an order from lowest to highest voltage values, until an output of the comparison changes;
identify an interim voltage based at least in part on the incrementally adjusted voltage value associated with the output of the comparison changing; and
calculate an actual voltage based at least in part on the voltage shift and the interim voltage.
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Abstract
Systems and methods relating generally to data processing, and more particularly to systems and methods for characterizing a solid state memory. In one embodiment, the systems and methods may include programming a first cell of a solid state memory device to a first voltage, programming a second cell of the solid state memory device to a second voltage different than the first voltage, detecting a voltage shift in the first cell when the second cell is being programmed; characterizing the first voltage of the first cell offset by the voltage shift as an interim voltage of the first cell, and repeatedly reading the interim voltage of the first cell using a first set of incrementally adjusted voltage values until an output of the first cell changes.
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Citations
20 Claims
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1. A memory system, comprising:
a memory cell characterization circuit operable to; program a first cell of a solid state memory device to a first voltage; program a second cell of the solid state memory device to a second voltage different than the first voltage; detect a voltage shift in the first cell when the second cell is being programmed; repeatedly read a shifted voltage value of the first cell; compare the shifted voltage value to a first set of incrementally adjusted voltage values, in an order from lowest to highest voltage values, until an output of the comparison changes; identify an interim voltage based at least in part on the incrementally adjusted voltage value associated with the output of the comparison changing; and calculate an actual voltage based at least in part on the voltage shift and the interim voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for characterizing a solid state memory device, the method comprising:
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programming a first voltage to a first cell of a solid state memory device; programming a second voltage different than the first voltage to a second cell of the solid state memory device; detecting a voltage shift on the first cell when the second cell is being programmed; repeatedly reading a shifted voltage value of the first cell; comparing the shifted voltage value to a first set of incrementally adjusted voltage values, in an order from lowest to highest voltage values, until an output of the comparison changes; identifying an interim voltage based at least in part on the incrementally adjusted voltage value associated with the output of the comparison changing; and calculating an actual voltage based at least in part on the voltage shift and the interim voltage. - View Dependent Claims (15, 16, 17)
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18. An electronic device, comprising:
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a solid state memory device; and a memory cell characterization circuit operable to; program a first cell of a solid state memory device to a first voltage; program a second cell of the solid state memory device to a second voltage different than the first voltage; detect a voltage shift in the first cell when the second cell is being programmed; repeatedly read a shifted voltage value of the first cell; compare the shifted voltage value to a first set of incrementally adjusted voltage values, in an order from lowest to highest voltage values, until an output of the comparison changes; identify an interim voltage based at least in part on the incrementally adjusted voltage value associated with the output of the comparison changing; and calculate an actual voltage of the first cell based on the voltage shift and the interim voltage. - View Dependent Claims (19, 20)
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Specification