×

Systems and methods for sub-zero threshold characterization in a memory cell

  • US 10,020,066 B2
  • Filed: 06/19/2017
  • Issued: 07/10/2018
  • Est. Priority Date: 10/28/2013
  • Status: Active Grant
First Claim
Patent Images

1. A memory system, comprising:

  • a memory cell characterization circuit operable to;

    program a first cell of a solid state memory device to a first voltage;

    program a second cell of the solid state memory device to a second voltage different than the first voltage;

    detect a voltage shift in the first cell when the second cell is being programmed;

    repeatedly read a shifted voltage value of the first cell;

    compare the shifted voltage value to a first set of incrementally adjusted voltage values, in an order from lowest to highest voltage values, until an output of the comparison changes;

    identify an interim voltage based at least in part on the incrementally adjusted voltage value associated with the output of the comparison changing; and

    calculate an actual voltage based at least in part on the voltage shift and the interim voltage.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×