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Method for cleaning substrate

  • US 10,020,184 B2
  • Filed: 03/09/2017
  • Issued: 07/10/2018
  • Est. Priority Date: 06/29/2015
  • Status: Active Grant
First Claim
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1. A method for cleaning a substrate, comprising:

  • providing a substrate;

    depositing an etch stop layer over the substrate, wherein the etch stop layer comprises a metal compound;

    depositing a dielectric layer over the etch stop layer;

    performing a plasma etching process to remove a first portion of the dielectric layer and a second portion of the etch stop layer, wherein metal compound residues are formed from the second portion and formed over at least one of the dielectric layer or the etch stop layer, the plasma etching process forms an opening in the dielectric layer and a recess in the etch stop layer, and the opening is over the recess; and

    exposing the substrate to an organic plasma to volatilize the metal compound residues, wherein the organic plasma removes the etch stop layer exposed by the opening.

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