Stress memorization technique for strain coupling enhancement in bulk finFET device
First Claim
Patent Images
1. A method for forming strained fins, comprising:
- forming mandrels with sidewall spacers;
removing the mandrels;
forming an etch mask;
etching trenches in a bulk substrate to form fins using the etch mask;
forming shallow trench isolation regions;
forming a staircase fin structure with narrow top portions of the fins;
forming gate structures over the top portions of the fins;
forming raised source and drain regions on opposite sides of the gate structure;
generating defects in the substrate to induce strain and couple the strain into the top portions of the fins; and
performing a stress memorization technique (SMT) anneal to propagate the strain through the fins from the substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for forming strained fins includes etching trenches in a bulk substrate to form fins, filling the trenches with a dielectric fill and recessing the dielectric fill into the trenches to form shallow trench isolation regions. The fins are etched above the shallow trench isolation regions to form a staircase fin structure with narrow top portions of the fins. Gate structures are formed over the top portions of the fins. Raised source ad drain regions are epitaxially grown on opposite sides of the gate structure. A pre-morphization implant is performed to generate defects in the substrate to couple strain into the top portions of the fins.
13 Citations
20 Claims
-
1. A method for forming strained fins, comprising:
-
forming mandrels with sidewall spacers; removing the mandrels; forming an etch mask; etching trenches in a bulk substrate to form fins using the etch mask; forming shallow trench isolation regions; forming a staircase fin structure with narrow top portions of the fins; forming gate structures over the top portions of the fins; forming raised source and drain regions on opposite sides of the gate structure; generating defects in the substrate to induce strain and couple the strain into the top portions of the fins; and performing a stress memorization technique (SMT) anneal to propagate the strain through the fins from the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A method for forming strained fins, comprising:
-
forming an etch mask; etching trenches in a bulk substrate to form fins using the etch mask; forming shallow trench isolation regions; forming a staircase fin structure with narrow top portions of the fins; forming gate structures over the top portions of the fins; forming raised source and drain regions on opposite sides of the gate structure; and generating defects in the bottom of the substrate to induce strain into the substrate such that the strain is coupled through broad middle portions of the fins into the top portions of the fins. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification