Semiconductor device

• US 10,020,246 B2
• Filed: 11/08/2016
• Issued: 07/10/2018
• Est. Priority Date: 02/08/2016
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Hori, Koichiro, Nishizawa, Koichiro
• Primary Examiner(s): Pham, Long
• Application Number:
  US15/345,560
• Publication Number:
  US 20170229380A1
• Time in Patent Office: 609 Days
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/32134 by liquid etching only
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures

Abstract

A semiconductor device includes: a semiconductor substrate through which a via hole is formed from a back surface to a front surface of the semiconductor substrate; an electrode provided on the front surface of the semiconductor substrate and closing the via hole; and a metal film provided on the back surface of the semiconductor substrate, a side wall of the via hole and a lower surface of the electrode, wherein an opening is provided in the metal film on the back surface of the semiconductor substrate, and the opening abuts on only part of a circumference of the via hole.

Claims

1. A semiconductor device comprising:

a semiconductor substrate through which a via hole is formed from a back surface to a front surface of the semiconductor substrate;

an electrode provided on the front surface of the semiconductor substrate and closing the via hole; and

a metal film provided on the back surface of the semiconductor substrate, a side wall of the via hole, and a lower surface of the electrode,

wherein an opening is provided in the metal film on the back surface of the semiconductor substrate, and

the opening abuts on only part of a circumference of the via hole to thereby discharge gas permeating an interface between the semiconductor substrate and the metal film.

2. The semiconductor device according to claim 1, wherein the interface between the side wall of the via hole and the metal film is exposed in the opening.

3. The semiconductor device according to claim 1, wherein the metal film includes first and second metal films successively laid on the back surface of the semiconductor substrate, a side wall of the via hole and a lower surface of the electrode,

the first metal film is thinner than the second metal film,

the opening is provided in the second metal film on the back surface of the semiconductor substrate, and

an interface between the first and second metal films on the side wall of the via hole is exposed in the opening.