Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
First Claim
1. An integrated circuit for performing a nucleic acid sequencing reaction, the integrated circuit comprising:
- a semi-conducting substrate having a plurality of extended planar surfaces offset from one another by a first thickness, being surrounded by one or more side members, and having one or more transistor elements positioned between the plurality of surfaces;
an array of field effect transistors arranged on the substrate, each of the field effect transistors comprising;
a primary layer forming a base layer;
a secondary layer over the primary layer, the secondary layer being formed of a first non-conductive material, the secondary layer comprising a plurality of trenches, each trench offset by a distance, each distance forming a channel region, each trench including an electrically conductive material to form an electrode having a side and top surface that extends above a surface of the of the secondary layer, each electrode on either side of each channel region being either a source electrode or a drain electrode; and
a tertiary layer over the secondary layer, the tertiary layer comprising a 2D material formed over side and top of the source and drain electrodes, the 2D material also formed over the channel region to electrically connect the source and the drain electrodes.
5 Assignments
0 Petitions
Accused Products
Abstract
Provided herein are integrated circuits for use in performing analyte measurements and methods of fabricating the same. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in chemical and/or biological processes, including DNA hybridization and/or sequencing reactions. The methods for fabricating the integrated circuits include steps of depositing an insulating layer on a semiconducting substrate, and forming trenches in the insulating dielectric layer. Conductive material may be deposited in the trenches to form electrodes, and the insulating layer may be conditioned so that the electrodes protrude above the insulating layer. A 2D material, such as graphene, may be deposited on the electrodes to form a channel between the electrodes.
507 Citations
13 Claims
-
1. An integrated circuit for performing a nucleic acid sequencing reaction, the integrated circuit comprising:
-
a semi-conducting substrate having a plurality of extended planar surfaces offset from one another by a first thickness, being surrounded by one or more side members, and having one or more transistor elements positioned between the plurality of surfaces; an array of field effect transistors arranged on the substrate, each of the field effect transistors comprising; a primary layer forming a base layer; a secondary layer over the primary layer, the secondary layer being formed of a first non-conductive material, the secondary layer comprising a plurality of trenches, each trench offset by a distance, each distance forming a channel region, each trench including an electrically conductive material to form an electrode having a side and top surface that extends above a surface of the of the secondary layer, each electrode on either side of each channel region being either a source electrode or a drain electrode; and a tertiary layer over the secondary layer, the tertiary layer comprising a 2D material formed over side and top of the source and drain electrodes, the 2D material also formed over the channel region to electrically connect the source and the drain electrodes. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. An integrated circuit for performing a nucleic acid sequencing reaction, the integrated circuit comprising:
-
a substrate having a plurality of extended planar surfaces offset from one another by a first thickness, being surrounded by one or more side members; an array of field effect transistors arranged on the substrate, each of the field effect transistors comprising; a primary layer forming a base layer; a secondary layer over the primary layer, the secondary layer being formed of a first non-conductive material, the secondary layer comprising a plurality of trenches, each trench offset by a distance, each distance forming a channel region, each trench including a first layer of electrically conductive material to form an electrode having a surface that extends above a surface of the secondary layer, each electrode on either side of each channel region being a source electrode and a drain electrode; and a tertiary layer over the secondary layer, the tertiary layer comprising a 2D material formed over the electrodes and having one or more openings proximate the electrodes, the 2D material also formed over the channel region to electrically connect the source and the drain, and a second layer of electrically conductive material formed over the openings of the 2D material and in electrical communication with the electrodes and the 2D material. - View Dependent Claims (9, 10, 11, 12, 13)
-
Specification