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Integrated circuit devices and methods of manufacturing the same

  • US 10,020,396 B2
  • Filed: 11/14/2016
  • Issued: 07/10/2018
  • Est. Priority Date: 05/26/2016
  • Status: Active Grant
First Claim
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1. An integrated circuit device comprising:

  • a substrate comprising a main surface;

    a compound semiconductor nanowire extending from the main surface in a first direction perpendicular to the main surface and comprising a first section and a second section alternately arranged in the first direction, wherein the first section and the second section have the same composition as each other and have different crystal phases from each other;

    a gate electrode covering the first section; and

    a gate dielectric layer between the first section and the gate electrode.

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