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Group III nitride wafers and fabrication method and testing method

  • US 10,024,809 B2
  • Filed: 07/22/2015
  • Issued: 07/17/2018
  • Est. Priority Date: 04/07/2006
  • Status: Active Grant
First Claim
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1. A method of fabricating a wafer of group III nitride comprising (a) growing a bulk crystal of group III nitride, (b) slicing the bulk crystal into wafers, (c) polishing at least one surface of a wafer selected from said wafers, and (d) directing an X-ray beam to said surface at an angle of less than 15 degrees to the surface to verify the presence of at least one X-ray diffraction peak, wherein the wafer has a surface either oriented with c-plane or misoriented from the c-plane, wherein said surface misorientation is within +/−

  • 10 degrees, and wherein the X-ray diffraction is from 114 plane of the group III nitride crystal.

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