Flows of optimization for lithographic processes

• US 10,025,201 B2
• Filed: 02/13/2015
• Issued: 07/17/2018
• Est. Priority Date: 04/14/2014
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Hsu, Duan-Fu Stephen, Howell, Rafael C., Liu, Xiaofeng
• Primary Examiner(s): NGUYEN, HUNG
• Application Number:
  US15/303,199
• Publication Number:
  US 20170038692A1
• Time in Patent Office: 1,250 Days
• Field of Search: 355 52, 355 53, 355 55, 355 67
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70191 Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
• CPC Class Codes: G03F 7/70433 Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70558 Dose control, i.e. achievement of a desired dose
• CPC Class Codes: G03F 7/70641 Focus

Abstract

A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.

Claims

1. A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus comprising projection optics and an illumination system configured to output an illumination, the method comprising:

obtaining an illumination shape and a mask defocus value;

optimizing, by a hardware computer system, a dose of the lithographic process; and

optimizing, by the hardware computer system, the portion of the design layout for each of a plurality of slit positions of the illumination.

2. The method of claim 1, further comprising optimizing the design layout wherein transmission at all locations of the portion of the design layout is not restricted to a number of discrete values.

3. The method of claim 1, further comprising obtaining a model of the illumination configured to simulate an aerial image produced by the illumination, a model of the portion of the design layout configured to simulate an aerial image produced by the portion of the design layout, a model of the projection optics configured to simulate an aerial image produced by the projection optics, or a combination selected therefrom.

4. The method of claim 3, wherein the optimizing the dose of the lithographic process comprises using at least one of the models.

5. The method of claim 1, further comprising determining, for each of the slit positions, a process window.

6. The method of claim 3, wherein the obtaining the model comprises optimizing the illumination and the portion of the design layout using a three-dimensional mask model, under an assumption that the illumination is a freeform illumination.

7. The method of claim 6, wherein the obtaining the model further comprises determining a plane of best focus of an aerial image formed by the illumination and the portion of the design layout optimized using the three-dimensional mask model.

8. The method of claim 6, wherein the optimizing the illumination and the portion of the design layout comprises using a cost function that represents at least one stochastic variation.

9. The method of claim 6, wherein the obtaining the model further comprises:

mapping the freeform illumination to a discrete illumination, or

optimizing the portion of the design layout and a discrete illumination, or

optimizing the projection optics.

10. The method of claim 1, wherein the obtaining the illumination shape and the mask defocus value comprises obtaining an initial value of mask defocus.

11. The method of claim 10, wherein the obtaining the illumination shape and the mask defocus value further comprises optimizing the illumination and the portion of the design layout using a thin mask model, wherein the illumination is a freeform illumination.

12. The method of claim 11, wherein the obtaining the illumination shape and the mask defocus value further comprises optimizing the mask defocus by using a three-dimensional mask model.

13. The method of claim 10, wherein the obtaining the illumination shape and the mask defocus value comprises:

determining a plurality of mask defocus values using a plurality of pupil profiles, or

averaging several mask defocus values.

14. The method of claim 10, wherein the obtaining the illumination shape and the mask defocus value comprises determining a plane of best focus of an aerial image formed by the illumination, the portion of the design layout and the projection optics.

15. A computer program product comprising a non-transitory computer readable medium having instructions recorded thereon, the instructions, when executed by a computer system, configured to:

obtain an illumination shape of an illumination to be produced by an illumination system of a lithographic projection apparatus, and a mask defocus value;

optimize a dose of a lithographic process for imaging a portion of a design layout onto a substrate using the lithographic projection apparatus; and

optimize the portion of the design layout for each of a plurality of slit positions of the illumination.

16. The computer program product of claim 15, wherein the instructions, when executed by the computer, are further configured to optimize the design layout wherein transmission at all locations of the portion of the design layout is not restricted to a number of discrete values.

17. The computer program product of claim 15, wherein the instructions, when executed by the computer, are further configured to determine, for each of the slit positions, a process window.

18. The computer program product of claim 15, wherein the instructions, when executed by the computer, are further configured to obtain a model of the illumination configured to simulate an aerial image produced by the illumination, a model of the portion of the design layout configured to simulate an aerial image produced by the portion of the design layout, a model of the projection optics configured to simulate an aerial image produced by the projection optics, or a combination selected therefrom.

19. The computer program product of claim 18, wherein the instructions, when executed by the computer, are further configured to optimize the dose of the lithographic process by using at least one of the models.

20. The computer program product of claim 15, wherein the instructions, when executed by the computer, are further configured to optimize the illumination and the portion of the design layout using a three-dimensional mask model, under an assumption that the illumination is a freeform illumination.