Magnetic capacitor structures

• US 10,026,551 B2
• Filed: 06/11/2015
• Issued: 07/17/2018
• Est. Priority Date: 06/23/2014
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Hsieh, Cho-Fan, Chen, Chih-Hua, Wu, Hung-Sen, Wu, Teng-Chun, Liao, Ming-Han
• Primary Examiner(s): HA, NGUYEN T
• Application Number:
  US14/737,152
• Publication Number:
  US 20150371777A1
• Time in Patent Office: 1,132 Days
• CPC Class Codes: H01G 4/008 Selection of materials
• CPC Class Codes: H01G 4/01 Form of self-supporting electrodes
• CPC Class Codes: H01G 4/10 Metal-oxide dielectrics H01G4/085 takes precedence
• CPC Class Codes: H01G 4/1218 based on titanium oxides or titanates H01G4/1245 takes precedence
• CPC Class Codes: H01G 4/33 Thin- or thick-film capacitors thin- or thick-film circuits H01L27/00; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/40
• CPC Class Codes: H01L 28/75 comprising two or more layers, e.g. comprising a barrier layer and a metal layer

Abstract

The present disclosure provides a magnetic capacitor structure including a first electrode, a second electrode opposite to the first electrode, a dielectric layer disposed between the first electrode and the second electrode, a first magnetic layer disposed between the first electrode and the dielectric layer, a second magnetic layer disposed between the second electrode and the dielectric layer, a first oxide layer disposed between the first electrode and the first magnetic layer, and a second oxide layer disposed between the second magnetic layer and the dielectric layer.

Claims

1. A magnetic capacitor structure, comprising:

a first electrode;

a second electrode, disposed opposite to the first electrode;

a dielectric layer, disposed between the first electrode and the second electrode;

a first magnetic layer, disposed between the first electrode and the dielectric layer;

a second magnetic layer, disposed between the second electrode and the dielectric layer;

a first oxide layer directly disposed on the first electrode; and

a second oxide layer, directly disposed on the dielectric layer, wherein the first oxide layer and the second oxide layer are composed of magnesium oxide (MgO), lanthanum strontium manganite (LSMO) or lead zirconium titanate (PZT).

2. The magnetic capacitor structure of claim 1, wherein the first electrode and the second electrode are composed of platinum (Pt) or aluminum (Al).

3. The magnetic capacitor structure of claim 1, wherein the dielectric layer is composed of silicon oxide, titanium oxide, barium titanate (BaTiO₃), or chromium based spinel (CdCr₂S₄).

4. The magnetic capacitor structure of claim 1, wherein crystalline phases of the dielectric layer comprise an amorphous phase and a cubic phase.

5. The magnetic capacitor structure of claim 1, wherein a grain size of the dielectric layer is between 100 nm to 300 nm.

6. The magnetic capacitor structure of claim 1, wherein the first magnetic layer and the second magnetic layer are composed of iron-platinum alloy (FePt) or cobalt-platinum alloy (CoPt).

7. The magnetic capacitor structure of claim 1, further comprising a passivation layer forming on the first electrode or the second electrode.

8. The magnetic capacitor structure of claim 7, wherein the passivation layer is composed of a metal layer, a metal oxide or metal nitride layer or the combinations thereof.

9. The magnetic capacitor structure of claim 7, further comprising a silicon substrate forming on the passivation layer.