Nanoshape patterning techniques that allow high-speed and low-cost fabrication of nanoshape structures
First Claim
1. A method for template fabrication of ultra-precise nanoscale shapes, the method comprising:
- forming structures with a smooth shape on a substrate using lithography;
subjecting said structures to an atomic layer deposition of one or more films leading to nanoscale sharp shapes with features that exceed lithography resolution capability of sub-10 nm resolution;
performing a resist imprint of said nanoscale sharp shapes using imprint lithography; and
etching said nanoscale sharp shapes into underlying functional films on said substrate forming a nanoshaped template with nanoscale sharp shapes that comprise one or more of the following;
sharp corners and ultra-small gaps ranging from 1 to 10 nanometers.
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Abstract
A method for template fabrication of ultra-precise nanoscale shapes. Structures with a smooth shape (e.g., circular cross-section pillars) are formed on a substrate using electron beam lithography. The structures are subject to an atomic layer deposition of a dielectric interleaved with a deposition of a conductive film leading to nanoscale sharp shapes with features that exceed electron beam resolution capability of sub-10 nm resolution. A resist imprint of the nanoscale sharp shapes is performed using J-FIL. The nanoscale sharp shapes are etched into underlying functional films on the substrate forming a nansohaped template with nanoscale sharp shapes that include sharp corners and/or ultra-small gaps. In this manner, sharp shapes can be retained at the nanoscale level. Furthermore, in this manner, imprint based shape control for novel shapes beyond elementary nanoscale structures, such as dots and lines, can occur at the nanoscale level.
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Citations
30 Claims
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1. A method for template fabrication of ultra-precise nanoscale shapes, the method comprising:
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forming structures with a smooth shape on a substrate using lithography; subjecting said structures to an atomic layer deposition of one or more films leading to nanoscale sharp shapes with features that exceed lithography resolution capability of sub-10 nm resolution; performing a resist imprint of said nanoscale sharp shapes using imprint lithography; and etching said nanoscale sharp shapes into underlying functional films on said substrate forming a nanoshaped template with nanoscale sharp shapes that comprise one or more of the following;
sharp corners and ultra-small gaps ranging from 1 to 10 nanometers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for template replication of ultra-precise nanoscale shapes, the method comprising:
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using a master template for patterning of imprint material on a residual layer that is positioned on a dissolvable layer which is positioned on a substrate; depositing a dielectric layer over said imprint material and said residual layer to capture shape details; performing one of chemical vapor deposition, physical vapor deposition and atomic layer deposition of said deposited dielectric layer to create a film over said imprint material and said residual layer; planarizing said film; bonding a replica substrate onto said planarized film; eliminating said dissolvable layer followed by flipping over a structure comprising said imprint material, said residual layer and said substrate; and removing said imprint material thereby forming a replica template. - View Dependent Claims (15, 16, 17, 18)
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19. A method to fabricate shaped cross-section silicon nanowires, the method comprising:
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depositing a sacrificial polymeric layer on a silicon; imprinting on said sacrificial polymeric layer using a nanoscale shaped template; etching a polymeric residual layer resulting from said imprinting; etching an underlying sacrificial polymeric layer following said etching of said polymeric residual layer, wherein said underlying sacrificial polymeric layer etch results in an undercut; performing a physical vapor deposition of a metal; removing said sacrificial polymeric layer to create nanoshaped metal structures on said silicon; and performing a metal assisted chemical etching process to create nanowires. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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26. A method to fabricate shaped cross-section silicon nanowires, the method comprising:
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depositing a sacrificial polymeric layer on a silicon; imprinting on said sacrificial polymeric layer using a nanoscale shaped template; coating said sacrificial polymeric layer with a silicon organic coating; planarizing and etching said silicon organic coating in a plasma involving fluorine and oxygen; etching an underlying sacrificial polymeric layer, wherein said underlying sacrificial polymeric layer etch results in an undercut; performing a physical vapor deposition of a metal to promote adhesion; performing a physical vapor deposition of a second metal; removing said sacrificial polymeric layer to create nanoshaped metal structures on said silicon; and performing a metal assisted chemical etching process to create nanowires. - View Dependent Claims (27, 28, 29, 30)
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Specification