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Singulation of ion-exchanged substrates

  • US 10,026,651 B1
  • Filed: 06/21/2017
  • Issued: 07/17/2018
  • Est. Priority Date: 06/21/2017
  • Status: Active Grant
First Claim
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1. A method comprising:

  • patterning a substrate into active areas and dicing lanes;

    after patterning the substrate, forming one or more stress layers in the substrate, wherein a change in stress along a thickness of the substrate in the active areas is larger than a change in stress along the thickness of the substrate in the dicing lanes, and forming the stress layers extends through more than about 50% of the thickness of the dicing lanes.

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