Singulation of ion-exchanged substrates
First Claim
Patent Images
1. A method comprising:
- patterning a substrate into active areas and dicing lanes;
after patterning the substrate, forming one or more stress layers in the substrate, wherein a change in stress along a thickness of the substrate in the active areas is larger than a change in stress along the thickness of the substrate in the dicing lanes, and forming the stress layers extends through more than about 50% of the thickness of the dicing lanes.
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Abstract
A method of making a substrate involves patterning the substrate into active areas and dicing lanes. After the substrate is patterned one or more stress layers are formed the substrate. A change in stress along a thickness of the substrate in the active areas is larger than a change in stress along the thickness of the substrate in the dicing lanes. The substrate is subsequently diced along the dicing lanes.
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Citations
17 Claims
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1. A method comprising:
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patterning a substrate into active areas and dicing lanes; after patterning the substrate, forming one or more stress layers in the substrate, wherein a change in stress along a thickness of the substrate in the active areas is larger than a change in stress along the thickness of the substrate in the dicing lanes, and forming the stress layers extends through more than about 50% of the thickness of the dicing lanes. - View Dependent Claims (2, 3, 4, 5)
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6. A method comprising:
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patterning a substrate into active areas and dicing lanes; and after patterning the substrate, forming one or more stress layers in the substrate, wherein a change in stress along a thickness of the substrate in the active areas is larger than a change in stress along the thickness of the substrate in the dicing lanes;
wherein;patterning the substrate into active areas and dicing lanes comprises thinning the substrate in the dicing lanes; and forming the stress layers comprises ion-exchanging ions in the active areas and in the dicing lanes until the change in stress along the thickness of the substrate in the active areas is substantially larger than the change in stress along the thickness of the substrate in the dicing lanes. - View Dependent Claims (17)
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7. A subassembly comprising a substrate having active areas and dicing lanes wherein one or both of the active areas and the dicing lanes are ion exchanged and wherein the dicing lanes have a stress profile in which a change in stress along a thickness of the substrate is less than a change in stress along a thickness of the substrate in the active areas;
- wherein the dicing lanes comprise ion exchanged dicing lanes.
- View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. An assembly comprising:
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a substrate having an active area that includes one or more stressed layers and dicing lanes disposed at least along a perimeter of the substrate, a change in stress along a thickness of the substrate in the dicing lanes being less than a change in stress along the thickness of the substrate in the active areas; and electrical circuitry disposed on the surface of the substrate; wherein the electrical circuitry includes at least one component configured to initiate fracture of the substrate.
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15. A method comprising:
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patterning a substrate into active areas and dicing lanes; after patterning the substrate, forming one or more stress layers in the substrate, wherein a change in stress along a thickness of the substrate in the active areas is larger than a change in stress along the thickness of the substrate in the dicing lanes; forming the one or more stress layers comprises placing the substrate into an ion bath and forming an ion-exchanged layer in the substrate; and the ion-exchanged layer extends through substantially all of the thickness of the dicing lanes.
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16. A method comprising:
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patterning a substrate into active areas and dicing lanes; after patterning the substrate, forming one or more stress layers in the substrate, wherein a change in stress along a thickness of the substrate in the active areas is larger than a change in stress along the thickness of the substrate in the dicing lanes; placing the substrate into an initial ion bath before patterning the substrate; and ion-exchanging ions in the substrate including ion-exchanging ions in the dicing lanes;
wherein;patterning the substrate into active areas and dicing lanes comprises masking the active areas of the substrate and leaving the dicing lanes unmasked; and forming the stress layers comprises continuing to ion-exchange ions in the dicing lanes until the change in stress along the thickness of the substrate in the active areas is substantially larger than the change in stress along the thickness of the substrate in the dicing lanes.
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Specification