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DRAM structure with a single diffusion break

  • US 10,026,740 B1
  • Filed: 10/30/2017
  • Issued: 07/17/2018
  • Est. Priority Date: 10/30/2017
  • Status: Active Grant
First Claim
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1. A DRAM structure, comprising:

  • a first memory cell pair;

    a second memory cell pair;

    a single diffusion break (SDB) isolation structure positioned between said first memory cell pair and said second memory cell pair; and

    a single first gate positioned between said first memory cell pair and said second memory cell pair and above said SDB isolation structure.

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