Method and system for forming patterns using charged particle beam lithography
First Claim
1. A method for mask data preparation (MDP) for use with charged particle beam lithography, the method comprising:
- inputting a substrate model;
determining an initial set of charged particle beam shots that is capable of forming a pattern on a reticle;
calculating a calculated reticle pattern using the initial set of shots;
calculating a pattern formed on a substrate using an optical lithographic process with the calculated reticle pattern; and
optimizing the initial set of shots based on the calculated pattern on the substrate;
wherein calculating the pattern formed on the substrate comprises lithography simulation and uses the substrate model, wherein the substrate model excludes charged particle beam effects and reticle processing effects, wherein the determining is performed using a computing hardware device, and wherein the optimized set of shots is to be used to form a pattern on a reticle.
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Abstract
A method for mask data preparation (MDP) is disclosed, in which a set of shots is determined that will form a pattern on a reticle, where the determination includes calculating the pattern that will be formed on a substrate using an optical lithographic process with a reticle formed using the set of shots. A method for optical proximity correction (OPC) or MDP is also disclosed, in which a preliminary set of charged particle beam shots is generated using a preliminary mask model, and then the shots are modified by calculating both a reticle pattern using a final mask model, and a resulting substrate pattern. A method for OPC is also disclosed, in which an ideal pattern for a photomask is calculated from a desired substrate pattern, where the model used in the calculation includes only optical lithography effects and/or substrate processing effects.
131 Citations
20 Claims
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1. A method for mask data preparation (MDP) for use with charged particle beam lithography, the method comprising:
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inputting a substrate model; determining an initial set of charged particle beam shots that is capable of forming a pattern on a reticle; calculating a calculated reticle pattern using the initial set of shots; calculating a pattern formed on a substrate using an optical lithographic process with the calculated reticle pattern; and optimizing the initial set of shots based on the calculated pattern on the substrate; wherein calculating the pattern formed on the substrate comprises lithography simulation and uses the substrate model, wherein the substrate model excludes charged particle beam effects and reticle processing effects, wherein the determining is performed using a computing hardware device, and wherein the optimized set of shots is to be used to form a pattern on a reticle. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for optical proximity correction (OPC) or mask data preparation (MDP) for use with charged particle beam lithography, the method comprising:
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inputting a set of charged particle beam shots; calculating a reticle pattern that will be formed on a reticle with the input set of charged particle beam shots, wherein calculating the reticle pattern comprises using a mask model; calculating a substrate pattern that will be formed on a substrate using an optical lithography process with the calculated pattern for the reticle; and optimizing the input set of shots based on the calculated pattern on the substrate, wherein the optimized set of shots is to be used to form a pattern on a reticle, wherein calculating the substrate pattern comprises lithography simulation, wherein calculating the substrate pattern comprises using a substrate model, wherein the substrate model excludes all effects which are included in the mask model, and wherein calculating the reticle pattern and calculating the substrate pattern are performed using a computing hardware device. - View Dependent Claims (17, 18, 19, 20)
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Specification