Source/drain performance through conformal solid state doping
First Claim
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1. A method of forming a semiconductor device for source/drain applications comprising:
- providing a substrate for processing in a reaction chamber, the substrate having at least one formed source/drain region, the at least one formed source/drain region being free of oxides or native oxides;
performing an atomic layer deposition of an elemental dopant layer on the substrate; and
performing an atomic layer deposition of a capping layer on the elemental dopant layer;
wherein, after the atomic layer deposition of the capping layer, the semiconductor device is subject to a drive-in anneal step to diffuse dopant from the elemental dopant layer into at least one of the formed source/drain regions, and wherein the atomic layer deposition of the elemental dopant layer forms a channel material of an NMOS device with a doping level greater than 1×
1020/cm3 with a diffusion depth less than 30 nm in the substrate.
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Abstract
A method for improving source/drain performance through conformal solid state doping and its resulting device are disclosed. Specifically, the doping takes place through an atomic layer deposition of a dopant layer. Embodiments of the invention may allow for an increased doping layer, improved conformality, and reduced defect formation, in comparison to alternate doping methods, such as ion implantation or epitaxial doping.
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16 Claims
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1. A method of forming a semiconductor device for source/drain applications comprising:
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providing a substrate for processing in a reaction chamber, the substrate having at least one formed source/drain region, the at least one formed source/drain region being free of oxides or native oxides; performing an atomic layer deposition of an elemental dopant layer on the substrate; and
performing an atomic layer deposition of a capping layer on the elemental dopant layer;wherein, after the atomic layer deposition of the capping layer, the semiconductor device is subject to a drive-in anneal step to diffuse dopant from the elemental dopant layer into at least one of the formed source/drain regions, and wherein the atomic layer deposition of the elemental dopant layer forms a channel material of an NMOS device with a doping level greater than 1×
1020/cm3 with a diffusion depth less than 30 nm in the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 14, 16)
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7. A method of forming a semiconductor device for source/drain applications comprising:
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providing a substrate for processing in a reaction chamber, the substrate having a formed source/drain, the substrate being free of oxides; performing an atomic layer deposition of an elemental dopant layer on the substrate; and
performing an atomic layer deposition of a capping layer on the elemental dopant layer, wherein the atomic layer deposition of the elemental dopant layer forms a channel material of an NMOS device with a doping level greater than 1×
1020/cm3 with a diffusion depth less than 30 nm in the substrate. - View Dependent Claims (8, 9, 10, 11, 12, 13, 15)
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Specification