Vertical fuse structures
First Claim
1. A semiconductor device, comprising:
- a plurality of vertical semiconductor fins formed on a semiconductor substrate, the plurality of vertical semiconductor fins comprising a first vertical semiconductor fin and a second vertical semiconductor fin;
a vertical fuse device comprising a metallic fuse element formed over a portion of the first vertical semiconductor fin, wherein the metallic fuse element comprises a first conformal metallic layer formed on the portion of the first vertical semiconductor fin, and a first metallic electrode layer formed on the first conformal metallic layer; and
a FINFET (Fin Field Effect Transistor) device comprising a metallic gate electrode formed over a portion of the second vertical semiconductor fin, wherein the metallic gate electrode comprises a high-k metallic gate stack structure conformally formed on the portion of the second vertical semiconductor fin and a second metallic electrode layer formed on the high-k metallic gate stack structure, wherein the high-k metallic gate stack structure comprises a conformal layer of dielectric material formed on the portion of the second vertical semiconductor fin and a second conformal metallic layer formed on the conformal layer of dielectric material;
wherein the first conformal metallic layer and the second conformal metallic layer are patterned from a same conformal layer of metallic material; and
wherein the first metallic electrode layer and the second metallic electrode layer are patterned from a same layer of metallic material.
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Accused Products
Abstract
Semiconductor devices and methods are provided in which vertical fuse devices are integrally formed with FINFET (Fin Field Effect Transistor) devices, wherein the vertical fuse devices are formed as part of a process flow for fabricating the FINFET devices. For example, a semiconductor device comprises first and second vertical semiconductor fins, a vertical fuse device, and a FINFET device. The vertical fuse device comprises a metal fuse element formed over a portion of the first vertical semiconductor fin, and the FINFET device comprises a metal gate electrode formed over a portion of the second vertical semiconductor fin. The metal fuse element and the metal gate electrode are concurrently formed as part of a replacement metal gate process flow.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a plurality of vertical semiconductor fins formed on a semiconductor substrate, the plurality of vertical semiconductor fins comprising a first vertical semiconductor fin and a second vertical semiconductor fin; a vertical fuse device comprising a metallic fuse element formed over a portion of the first vertical semiconductor fin, wherein the metallic fuse element comprises a first conformal metallic layer formed on the portion of the first vertical semiconductor fin, and a first metallic electrode layer formed on the first conformal metallic layer; and a FINFET (Fin Field Effect Transistor) device comprising a metallic gate electrode formed over a portion of the second vertical semiconductor fin, wherein the metallic gate electrode comprises a high-k metallic gate stack structure conformally formed on the portion of the second vertical semiconductor fin and a second metallic electrode layer formed on the high-k metallic gate stack structure, wherein the high-k metallic gate stack structure comprises a conformal layer of dielectric material formed on the portion of the second vertical semiconductor fin and a second conformal metallic layer formed on the conformal layer of dielectric material; wherein the first conformal metallic layer and the second conformal metallic layer are patterned from a same conformal layer of metallic material; and wherein the first metallic electrode layer and the second metallic electrode layer are patterned from a same layer of metallic material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device, comprising:
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a plurality of vertical semiconductor fins formed on a semiconductor substrate, the plurality of vertical semiconductor fins comprising a first vertical semiconductor fin and a second vertical semiconductor fin; a vertical fuse device comprising; a metallic fuse element formed over a portion of the first vertical semiconductor fin, wherein the metallic fuse element comprises a first conformal metallic layer formed on the portion of the first vertical semiconductor fin, and a first metallic electrode layer formed on the first conformal metallic layer; a first insulating sidewall spacer surrounding the metallic fuse element; and a first capping layer formed on an upper surface of the metallic fuse element; and a FINFET (Fin Field Effect Transistor) device comprising; a metallic gate electrode formed over a portion of the second vertical semiconductor fin, wherein the metallic gate electrode comprises a high-k metallic gate stack structure conformally formed on the portion of the second vertical semiconductor fin and a second metallic electrode layer formed on the high-k metallic gate stack structure, wherein the high-k metallic gate stack structure comprises a conformal layer of dielectric material formed on the portion of the second vertical semiconductor fin and a second conformal metallic layer formed on the conformal layer of dielectric material; a second insulating sidewall spacer surrounding the metallic gate electrode; and a second capping layer formed on an upper surface of the metallic fuse element; wherein the first conformal metallic layer and the second conformal metallic layer are patterned from a same conformal layer of metallic material; and wherein the first metallic electrode layer and the second metallic electrode layer are patterned from a same layer of metallic material. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification