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Field-effect semiconductor device

  • US 10,032,767 B2
  • Filed: 05/19/2015
  • Issued: 07/24/2018
  • Est. Priority Date: 09/04/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor body having a main surface, the semiconductor body comprising a drift region of a first band-gap material, the drift region being of a first conductivity type; and

    a metallization arranged at the main surface,wherein in a cross-section which is substantially orthogonal to the main surface, the semiconductor body further comprises;

    a contact region of the first band-gap material directly adjoining the drift region and the metallization, the contact region being of a second conductivity type; and

    an anode region of a second band-gap material having a lower band-gap than the first band-gap material, the anode region being in ohmic contact with the metallization and forming a heterojunction with the drift region.

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