Light-emitting device
First Claim
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1. A semiconductor device comprising:
- a first pixel comprising;
a first transistor comprising a first semiconductor film including a first channel forming region, the first channel forming region having a first channel width and a first channel length; and
a first EL element connected to the first transistor; and
a second pixel comprising;
a second transistor comprising a second semiconductor film including a second channel forming region, the second channel forming region having a second channel width and a second channel length; and
a second EL element connected to the second transistor,wherein a ratio of the first channel width to the first channel length is different from a ratio of the second channel width to the second channel length,wherein the first EL element and the second EL element comprise a first EL material and a second EL material, respectively,wherein the first EL material is different from the second EL material, andwherein each of the first channel forming region and the second channel forming region comprises crystalline silicon.
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Abstract
There is provided a semiconductor device including a first pixel and a second pixel each including a transistor and an EL element including a pixel electrode electrically connected to the transistor. A ratio of a channel width (W) to a channel length (L) of the transistor in the first pixel is different from a ratio of a channel width (W) to a channel length (L) of the transistor in the second pixel.
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Citations
53 Claims
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1. A semiconductor device comprising:
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a first pixel comprising; a first transistor comprising a first semiconductor film including a first channel forming region, the first channel forming region having a first channel width and a first channel length; and a first EL element connected to the first transistor; and a second pixel comprising; a second transistor comprising a second semiconductor film including a second channel forming region, the second channel forming region having a second channel width and a second channel length; and a second EL element connected to the second transistor, wherein a ratio of the first channel width to the first channel length is different from a ratio of the second channel width to the second channel length, wherein the first EL element and the second EL element comprise a first EL material and a second EL material, respectively, wherein the first EL material is different from the second EL material, and wherein each of the first channel forming region and the second channel forming region comprises crystalline silicon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a first pixel comprising; a first transistor comprising a first semiconductor film including a first channel forming region, the first channel forming region having a first channel width and a first channel length; and a first pixel electrode electrically connected to the first transistor; a second pixel comprising; a second transistor comprising a second semiconductor film including a second channel forming region, the second channel forming region having a second channel width and a second channel length; and a second pixel electrode electrically connected to the second transistor; a flattening layer interposed between the first channel forming region and the first pixel electrode; and a layer including an organic material, the layer being over and in contact with the first pixel electrode, wherein a ratio of the first channel width to the first channel length is different from a ratio of the second channel width to the second channel length, and wherein each of the first channel forming region and the second channel forming region comprises crystalline silicon. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a transistor; a first interlayer insulating film over the transistor; a pixel electrode over the first interlayer insulating film and electrically connected to the transistor, wherein part of the pixel electrode is provided in a contact hole provided in the first interlayer insulating film, an insulating film in contact with the first interlayer insulating film and an edge portion of the pixel electrode, wherein part of the insulating film in the contact hole is in contact with the pixel electrode; an EL layer over the pixel electrode and the insulating film; and an electrode overlapping with the pixel electrode with the EL layer interposed therebetween, wherein a ratio of a channel width to a channel length of the transistor is lower than or equal to 0.214. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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36. A semiconductor device comprising:
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a first pixel and a second pixel each comprising; a first transistor; and an EL element comprising; a pixel electrode electrically connected to the first transistor; an EL layer over the pixel electrode; and an electrode overlapping with the pixel electrode with the EL layer interposed therebetween, wherein a ratio of a channel width to a channel length of the first transistor in the first pixel is different from a ratio of a channel width to a channel length of the first transistor in the second pixel. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53)
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Specification