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Light-emitting device

  • US 10,032,840 B2
  • Filed: 11/08/2016
  • Issued: 07/24/2018
  • Est. Priority Date: 02/29/2000
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a first pixel comprising;

    a first transistor comprising a first semiconductor film including a first channel forming region, the first channel forming region having a first channel width and a first channel length; and

    a first EL element connected to the first transistor; and

    a second pixel comprising;

    a second transistor comprising a second semiconductor film including a second channel forming region, the second channel forming region having a second channel width and a second channel length; and

    a second EL element connected to the second transistor,wherein a ratio of the first channel width to the first channel length is different from a ratio of the second channel width to the second channel length,wherein the first EL element and the second EL element comprise a first EL material and a second EL material, respectively,wherein the first EL material is different from the second EL material, andwherein each of the first channel forming region and the second channel forming region comprises crystalline silicon.

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