Patterned substrate design for layer growth
First Claim
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1. A device comprising:
- a substrate comprising a patterned surface, wherein the patterned surface includes a set of substantially flat top surfaces and a plurality of openings, wherein each substantially flat top surface includes a set of regions having a root mean square roughness less than approximately 0.5 nanometers, and wherein an opening of the plurality of openings has a characteristic size between approximately 0.1 micron and five microns;
a group III-nitride buffer layer located directly on the substrate; and
a group III-nitride light emitting active region located on the buffer layer.
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Abstract
A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. One or more of the substantially flat top surfaces can be patterned based on target radiation.
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Citations
20 Claims
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1. A device comprising:
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a substrate comprising a patterned surface, wherein the patterned surface includes a set of substantially flat top surfaces and a plurality of openings, wherein each substantially flat top surface includes a set of regions having a root mean square roughness less than approximately 0.5 nanometers, and wherein an opening of the plurality of openings has a characteristic size between approximately 0.1 micron and five microns; a group III-nitride buffer layer located directly on the substrate; and a group III-nitride light emitting active region located on the buffer layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A device comprising:
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a substrate comprising a patterned surface, wherein the patterned surface includes a set of substantially flat top surfaces and a plurality of openings, wherein each substantially flat top surface includes a set of regions having a root mean square roughness less than approximately 0.5 nanometers, and wherein an opening of the plurality of openings has a characteristic size between approximately 0.1 micron and five microns; a group III-nitride buffer layer located directly on the set of substantially flat top surfaces, wherein the buffer layer and has a thickness sufficient for the buffer layer to coalesce; a group III-nitride n-type layer located on the buffer layer; a group III-nitride light emitting active region located on the n-type layer; and a group III-nitride p-type layer located on the active region. - View Dependent Claims (13, 14, 15, 16)
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17. A light emitting device comprising:
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a substrate comprising a patterned surface, wherein the patterned surface includes a set of substantially flat top surfaces and a plurality of openings, wherein each substantially flat top surface includes a set of regions having a root mean square roughness less than approximately 0.5 nanometers, and wherein an opening of the plurality of openings has a characteristic size between approximately 0.1 micron and five microns; a buffer layer located directly on the set of substantially flat top surfaces, wherein the buffer layer and has a thickness sufficient for the buffer layer to coalesce; a n-type layer located on the buffer layer; a light emitting active region located on the n-type layer; and a p-type layer located on the active region. - View Dependent Claims (18, 19, 20)
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Specification